Sumitomo Electric Industries, Limited

Yasuyuki Matsui

Hirohiko Nakata

Kenjiro Higaki

Masuhiro Natsuhara

Akira Kuibira

Takashi Ishii

Hideo Itozaki

Tatsuoki Nagaishi

Hirokazu Kugai

A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.

Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder

A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.

Wafer holder for semiconductor manufacturing apparatus, method of manufacturing wafer holder, and semiconductor manufacturing apparatus

A superconducting thin film pattern ( ) formed from an oxide superconducting thin film is formed on a sapphire substrate ( ) having a step ( ) via a CeO buffer layer, and the step ( ) and superconducting thin film pattern ( ) are formed such that the step ( ) crosses a predetermined portion of a square thin film pattern ( ) having an opening portion ( ) at the central portion. Step-edge Josephson junctions ( ) are formed at the portion crossed by the step ( ), and a SQUID is obtained. The sapphire substrate is relatively inexpensive, and a large substrate can be used.

Squid

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Itami, Japan

Yasuyuki Matsui