Sharp Kabushiki Kaisha Corporation

Yasuyuki Itoh

Jun Kudo

Masaya Nagata

Seiichi Yokoyama

Shun Mitarai

Keizo Sakiyama

Shigeo Onishi

Akira Okutoh

Nobuhito Ogata

Maho Ushikubo

Hitoshi Urashima

A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a Ta Si N film or a Hf Si N film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO film which are sequentially formed.

Semiconductor device including capacitor with lower electrode including iridium and iridium oxide layers

A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a Ta,Si,N,film or a Hf,Si,N,film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO,film which are sequentially formed.

Semiconductor memory device and production method of the same

An alloy oxide film of platinum and rhodium is formed as an upper electrode so as to be put in direct contact with a ferroelectric PZT film. Asymmetry of a hysteresis loop characteristic of a dielectric material representing a correlation between a polarization value and an application electric field as well as a deterioration such as an increase in leak current density, when oxide electrode of IrO,, RuO,, RhO,or the like is used, are improved.

Semiconductor memory device prevented from deterioration due to activated hydrogen

In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.

Semiconductor storage device having a capacitor electrode formed of at least a platinum-rhodium oxide

In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode. The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1. The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2&lt;X&lt;1.0 and 0&lt;Y&lt;1.0.

Semiconductor memory device with amorphous diffusion barrier between

A method for etching a ferroelectric film made of a compound containing lead of the present invention, includes the steps of: forming an insulating film, metal films, and a ferroelectric film on a substrate in this order; forming an etching resistant film on the ferroelectric film, followed by patterning; and etching the ferroelectric film with a mixed gas containing an inert gas and a halogen gas or a halogenated gas as an etching gas, using the patterned etching resistant film as an etching mask.

Method for etching ferroelectric film

A dielectric thin film device comprising at least an electrode and a dielectric thin film, said dielectric thin film being a laminate of a plurality of layers whose compositions comprise the same kinds of atoms including volatile atom(s) but are different in the content of the volatile atom(s) in at least one layer from the other.

Growing community of inventors

Hamamatsu, Japan

Yasuyuki Itoh