Sony Corporation

Yasuyuki Ito

Shun Mitarai

Masahiro Tada

Takashi Kinoshita

Masami Suzuki

Hitoshi Tamada

Ayumu Taguchi

Akihiko Ochiai

Masato Nishida

Katsuaki Asano

Masayuki Nagao

A semiconductor package includes: a supporting substrate; a functioning element and a first joining element formed on a first principal surface of the supporting substrate; a sealing substrate disposed in an opposing relationship to the supporting substrate with the functioning element and the first joining element interposed therebetween; a second joining element provided on a second principal surface of the supporting substrate; a through-electrode provided in and extending through the supporting substrate and adapted to electrically connect the first and second joining elements; and a first electromagnetic shield film coated in an overall area of a side face of the supporting substrate which extends perpendicularly to the first and second principal surfaces.

Semiconductor package and manufacturing method for a semiconductor package as well as optical module

A diffraction grating light modulator composed of a plurality of diffraction grating light modulating elements formed on a substrate, each consisting of a lower electrode, belt-like fixed electrodes and movable electrodes supported above the lower electrode, and exposed connecting terminals (for electrical connection to external circuits) electrically connected to the movable electrodes, the fixed electrodes and the movable electrodes constituting a diffraction grating upon application of a voltage to the lower electrode, the diffraction grating light modulator having a protective electrode surrounding the connecting terminals, so that the diffraction grating light modulating element is certainly protected from damage by static electricity.

Aggregate of electronic device chips, electronic device chip, aggregate of diffraction grating light modulators, and diffraction grating light modulator

Disclosed is a micromachine as a high-frequency filter which includes a high Q value and is suitable for higher frequency bands. The micromachine () includes an output electrode () formed on a substrate (), an interlayer insulating film () which covers the substrate () and includes an opening () whose bottom is the output electrode (), and a beltlike resonator electrode () so formed on the interlayer insulating film () as to traverse above the space (A) in the opening (), with the resonator electrode () being concave toward the opening () along the side wall of the opening ().

Micromachine and method of producing the same

A ferroelectric-type nonvolatile semiconductor memory comprises a bit line BL , a transistor for selection TR , (C) a memory unit MU composed of memory cells that are M in number (M&gE;2), and (D) plate lines PL that are M in number; in which each memory cell comprises a first electrode a ferroelectric layer and a second electrode in the memory unit MU , the first electrodes of the memory cells are in common, the ferroelectric layer is composed of lead titanate zirconate &lsqb;Pb(Zr ,Ti )O &rsqb;, and said lead titanate zirconate has a composition that satisfies 0.6<Y/(X&plus;Y)&lE;0.9.

Ferroelectric nonvolatile semiconductor memory

A semiconductor memory device able to increase the effective area of a capacitor in a memory cell and ensure a sufficient amount of charge contained in a read signal while maintaining the smallest cell area and a method for producing the same, wherein a first node electrode, a first ferroelectric film, and plate electrodes form four ferroelectric capacitors, plate electrodes, a second ferroelectric film, and a second node electrode form other four ferroelectric capacitors, the first node electrode is electrically connected to the second node electrode, a capacitor below a plate electrode is connected in parallel with the capacitor above the plate electrode, and these two capacitors connected in parallel form a memory cell storing 1 bit of data.

Semiconductor memory device and method for producing the same

Provided is a semiconductor memory device in which defective contact, deterioration in transistor characteristics and other problems are solved with a thermally stable, conductive diffusion barrier layer against oxygen, and against constituent elements in a plug material and a lower electrode, formed at the interface between a plug and the lower electrode made of a noble metal. The semiconductor memory device comprises a dielectric capacitor of a stacked structure including a first electrode (a lower electrode), a dielectric film and a second electrode (an upper electrode) and a conductive plug connected to the lower electrode, wherein the lower electrode connected to the conductive plug includes a metal suboxide layer with conductiveness and a diffusion barrier layer blocking diffusion of oxygen, and the metal suboxide layer and the diffusion barrier layer are stacked in the order from the conductive plug side of the lower electrode.

Growing community of inventors

Kanagawa, Japan

Yasuyuki Ito