Ube Industries, Inc.

Riken Corporation

Yasuyuki Ichizono

Shinichi Ishitobi

Hisayoshi Iba

Hideki Hirayama

Hideki Ohtsubo

Shin-Ichi Sakata

Norifumi Miyamoto

A ceramic composite for light conversion, which can make the fluorescence dominant wavelength longer up to 580 nm, further arbitrarily adjust the wavelength in the range of 570 to 580 nm, and undergoes no decrease in fluorescence intensity even when the fluorescence dominant wavelength is made longer, with luminescence unevenness suppressed. A light-emitting device comprising ceramic composite mentioned above. The ceramic composite for light conversion is a solidified body including a composition expressed by the following formula (1), where the composition has a structure where at least two oxide phases of a first phase and a second phase are continuously and three-dimensionally entangled mutually, and the ceramic composite for light conversion is characterized in that the first phase is a (Tb, Y)AlOphase activated with Ce for producing fluorescence, whereas the second phase is an AlOphase.

Ceramic composite for light conversion and light-emitting device using same

A ceramic composite for light conversion, and method of producing same and a light emitting device including the same. The ceramic composite for light conversion of the present invention is a solidified body having a structure in which at least two oxide phases including a first phase and a second phase are continuously and three-dimensionally intertwined with one another, and characterized in that the first phase is a YAlOphase including Ba or Sr and activated with fluorescent Ce, the second phase is an AlOphase, and the Sr or Ba in the solidified body are contained in an amount of 0.01 to 1.00 part by mass based on 100 parts by mass of the solidified body, in terms of the oxide.

Ceramic composite for light conversion

Provided are a ceramic composite for light conversion, which is capable of maintaining a high radiant flux even when the proportion of Gd and Ce is increased to tune the fluorescence peak wavelength to the longer wavelength side, a process for producing the ceramic composite, and a light emitting device including the ceramic composite. The ceramic composite for light conversion is a solidification product including a composition that is represented by a specific formula, and has a texture of continuously and three-dimensionally mutually entangled oxide phases including at least two phases of a first phase and a second phase, characterized in that the first phase is a YAlOfluorescent phase activated with Ce, and the second phase is an AlOphase, and the first phase and second phase account for 97% by area or more of a cross section of the solidification product, or characterized in that the first phase is a YAlOfluorescent phase activated with Gd and Ce, and the second phase is an AlOphase, and the first phase and second phase account for 97% by area or more of a cross section of the solidification product.

Ceramic composite for light conversion, process for production thereof, and light-emitting devices provided with same

A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided. A composite substrate for the formation of a light-emitting device, comprising a light-converting material substrate for radiating at least a part of incident light as light different in the wavelength through the surface opposite the incident surface, and at least two or more Al-containing nitride layers formed on the light-converting material substrate, wherein the light-converting material substrate has a texture comprising two or more oxide phases continuously and three-dimensionally entangled with each other, including an AlOphase and at least one fluorescence-emitting oxide phase, and the nitride layer has a first layer of an Al-containing nitride layer formed on the light-converting material substrate and a second layer of AlN having a dislocation density of 1&#xd7;10/cmor less and preferably having a surface roughness (RMS) of 10 nm or less.

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Ube, Japan

Yasuyuki Ichizono