Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Panasonic Corporation

Seiko Precision Inc.

Yasuyuki Endo

Masatoshi Kimura

Kunihiko Hara

Hiroshi Kubo

Hiroki Ui

Kohji Shinomiya

Yutaka Arima

Hiroshi Toya

Shinsuke Igarashi

A solid-state imaging device includes: an image area including pixels arranged in a matrix; two row memories each of which alternatively (i) stores at a time pixel signals for each of rows, and (ii) sequentially provides each of the stored pixel signals; a reading control unit, during a horizontal period, sequentially reading the stored pixel signals one by one from a first line memory to cause the first line memory, the first line memory representing one of the two row memories; a holding control unit causing, during the horizontal period, a second line memory to hold pixel signals provided from one of the rows in the image area, the second line memory representing another one of the two row memories; and a reading suspending unit causing the reading control unit to suspend reading out the pixel signals from the first line memory during a noise occurrence predicted period.

Solid-state imaging device and imaging apparatus

In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.

Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same

A solid-state image pickup apparatus includes a solid-state image pickup device having a layer of microlenses above a color filter. The solid-state image pickup device is mounted on a side of a flexible printed circuit board by flip-chip bonding, opposite the opening. An adhesive in a gap between the solid-state image pickup device and the flexible printed circuit board strengthens the apparatus. The distance between the edge of the microlens layer and the edge of the flexible printed circuit board defining the opening and nearest to the microlens layer is 2.5 to 10 times wider than the gap between the solid-state image pickup device and the flexible printed circuit board.

Solid-state image pickup apparatus limiting adhesive intrusion

Photolithography is used to form a photoresist ( ) having an opening over an end portion of a gate structure ( ) and over a region adjacent to the gate structure ( ) where a photodiode ( ) is to be formed. Next, using the photoresist ( ) as an implantation mask, vertical implantation of N-type impurities ( ) such as phosphorus is performed at an energy of 300 to 600 keV and a dose of 1E12 to 1E14 ions/cm , thereby forming an N-type impurity-introduced region ( ) in an upper surface of a P well ( ). At this time, the N-type impurities ( ) can penetrate through the gate structure ( ) to enter into the P well ( ), allowing the N-type impurity-introduced region ( ) to be also formed under the gate structure ( ).

Semiconductor device having solid-state image sensor with suppressed variation in impurity concentration distribution within semiconductor substrate, and method of manufacturing the same

A semiconductor image pickup device includes a pixel array having pixels arranged in a matrix. Each pixel includes a photodiode that converts an optical signal into an electrical signal, and a transistor connected to a charge accumulation section of the photodiode. A buffer is additionally provided. This buffer controls the transistor of the pixels using a lower control power supply voltage than a power supply voltage of the pixel array.

Growing community of inventors

Hyogo, Japan

Yasuyuki Endo