Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Yasuyuki Baba

Atsuhiro Sato

Toshifumi Minami

Keisuke Yonehama

Hiroshi Shinohara

Hideyuki Kamata

Masanobu Shirakawa

Takuya Futatsuyama

Kenichi Abe

Teppei Higashitsuji

Hiroshi Nakamura

Shinji Saito

Hiroyuki Maeda

Mitsuhiro Noguchi

Hiroyuki Nagashima

Kazuhiko Yamamoto

Hirofumi Inoue

Yoshitaka Kubota

Takuya Konno

Susumu Yoshikawa

Kazuichi Komenaka

A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.

Semiconductor memory device

A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.

A semiconductor memory device comprises a memory block including conductive layers at different levels from a substrate and separated from each other by a first insulation material. A memory pillar extends through the first conductive layers. A hookup region is adjacent to the memory block and includes conductive layers stacked on the substrate at levels from the substrate that corresponds to the conductive layers in the memory block. An isolation region is between the memory block and the hookup region and includes first insulating layers of a second insulating material different than the first insulating material. Each first insulating layer is at a level from the substrate that corresponds to one of the first conductive layers and each first insulating layer is between one of the conductive layers in the memory block and one of the conductive layers in hookup region.

A semiconductor memory device includes a plurality of wiring layers formed on a substrate, one or more first pillars penetrating through the wiring layers on a memory region of the substrate and in contact with the substrate, a plurality of memory transistors being formed at portions of each of the one or more first pillars that penetrate the wiring layers, and one or more second pillars penetrating through at least one of the wiring layers on a peripheral region of the substrate and in contact with the substrate. Each of the first and second pillars includes a semiconductor portion, a first insulating layer formed around the semiconductor portion, a charge accumulation layer formed around the first insulating layer, and a second insulating layer formed around the charge accumulation layer.

Semiconductor memory device having pillars on a peripheral region and method of manufacturing the same

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Ayase Kanagawa, Japan

Yasuyuki Baba