Sandisk Technologies Inc.

Yasuyuki Aoki

Kazutaka Yoshizawa

Hiroyuki Ogawa

Akira Inoue

Hiroshi Nakatsuji

Shigeki Shimomura

Akio Nishida

Kiyokazu Shishido

Tomoyuki Obu

Eisuke Takii

Yu Ueda

Masashi Ishida

A semiconductor structure includes a first field effect transistor including a first gate spacer having first laterally-straight bottom edges that coincide with top edges of first laterally-straight sidewalls of the first gate dielectric. The semiconductor structure further includes a second field effect transistor including a second gate dielectric that includes at least one discrete gate-dielectric opening that overlies a respective second active region, and a second gate spacer including a contoured portion that overlies and laterally surrounds a second gate electrode, and at least one horizontally-extending portion that overlies the second active region and including at least one discrete gate-spacer openings. The second field effect transistor may have a symmetric or non-symmetric configuration.

High voltage field effect transistors with different sidewall spacer configurations and method of making the same

Field effect transistors for an SRAM cell can be formed employing n-doped gate electrode portions for p-type pull-up transistors. The SRAM cell includes a first series connection of a first p-type pull-up transistor and a first n-type pull-down transistor located between a power supply source and electrical ground, and a second series connection of a second p-type pull-up transistor and a second n-type pull-down transistor located between the power supply source and the electrical ground. Each gate electrode of the SRAM cell can include a respective n-doped gate electrode portion.

Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same

A first field effect transistor and a second field effect transistor are formed on a substrate. A silicon nitride liner is formed over the first field effect transistor and the second field effect transistor. An upper portion of the silicon nitride liner is converted into a thermal silicon oxide liner. A lower portion of the silicon nitride liner remains as a silicon nitride material portion. A first portion of the thermal silicon oxide liner is removed from above the second field effect transistor, and a second portion of the thermal silicon oxide liner remains above the first field effect transistor. Selective presence of the silicon oxide liner provides differential stress within the channels of the first and second field effect transistors, which can be employed to optimize performance of different types of field effect transistors.

Field effect transistors having different stress control liners and method of making the same

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Yokkaichi, Japan

Yasuyuki Aoki