Daicel Corporation

The University of Tokyo

Tokyo Ohka Kogyo Co., Ltd.

Yasuyuki Akai

Takeshi Yokoo

Youji Suzuki

Junichi Takeya

Toshihiro Okamoto

Daiji Ikeda

Tadanori Kurosawa

Dai Shiota

Kunihiro Noda

Hiroki Chisaka

Hideyuki Takai

Mayumi Kuroko

Yukitsugu Maeda

Kouhei Fujita

Takafumi Imoto

Kyuhei Kitao

Yu Yamashita

Yoshinori Tadokoro

Ichiro Takase

Yasuhide Ohuchi

Tatsuro Ishikawa

Hiroyuki Fujii

Takanori Kobatake

Tomoya Egawa

Yoshiya Narasaki

Shinya Sahara

Daisuke Tanida

Dinghai Cen

Provided is a compound that is excellent in chemical stability, has high solubility in a solvent, and exhibits excellent carrier mobility. A compound represented by Formula (1):

Compound and application thereof

An object of the present disclosure is to provide a paste that can suppress fluctuations in viscosity at a printing temperature to perform printing without unevenness, and is sintered fast even in an inert gas atmosphere such as nitrogen to form a highly accurate conductive wiring and a joined structure excellent in joining strength. The present disclosure provides an adhesive conductive paste for forming a conductive wiring and/or a joined structure to connect electronic elements, the adhesive conductive paste including a conductive particle and a solvent. The adhesive conductive paste contains, as the conductive particle, a silver particle (A) having an average particle size of 1 nm or greater and less than 100 nm and a silver particle (B) having an average particle size of 0.1 μm or greater and 10 μm or less, the silver particle (A) being a silver nanoparticle having a configuration in which a surface is coated with a protective agent containing amine, and

Adhesive conductive paste

Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where Rand Rare identical or different, and each represent an electron withdrawing group; and Rand Rmay be bonded to each other to form a ring with an adjacent nitrogen atom.

Conductor material

Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), Rto Rmay be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of Rto Ris a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar, Ar, and Armay be the same or different, and each denotes a divalent aromatic group, and Ar, Ar, Ar, and Armay be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

Dopant and conductor material

A novel dopant according to the present disclosure includes an anion represented by the following Formula (1) and a counter cation. In Formula (1), Rand Rmay be each at least one group selected from a nitro group, a cyano group, an acyl group, a carboxyl group, an alkoxycarbonyl group, a haloalkyl group, a sulfo group, an alkylsulfonyl group, an halosulfonyl group, and a haloalkylsulfonyl group, or may be a group formed by Rand Rbonded to each other [—SO-L-SO—] (where L represents a haloalkylene group). The counter cation may be a radical cation represented by Formula (2), where Rand Rrepresent electron-withdrawing groups that may be bonded to each other to form a heterocycle, and Rto Rrepresent a hydrogen atom, a hydrocarbon group that may have a substituent, or a heterocyclic group that may have a substituent. The dopant is capable of forming an electroconductive composition that shows a high conductivity.

Dopant, electroconductive composition and method for producing same

An object of the present invention is to provide an ink composition for manufacturing an organic semiconductor device, the ink composition allowing an organic semiconductor material with a rigid main chain into an ink having an optimal solute concentration for a single-crystal formation process. The present invention provides an ink composition for manufacturing an organic semiconductor device, the ink composition including at least one solvent selected from Naphthalene Compound (A) and at least one solute. The isomer content of Naphthalene Compound (A) is preferably 2% or less in terms of a percentage for peak area with Naphthalene Compound (A) being 100% in gas chromatography. Naphthalene Compound (A): a compound represented by Formula (a), where in Formula (a), R is as defined in the description.

Ink composition for manufacturing organic semiconductor device

The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms. 

Solvent composition for electronic device production

Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6). wherein Xand Xare the same or different and each represent an oxygen atom, a sulfur atom, or a selenium atom, m is 0 or 1, nand nare the same or different and each represent 0 or 1, and Rand Rare the same or different and each represent a fluorine atom, a Calkyl group, a Caryl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group, in which 1 or 2 or more hydrogen atoms contained in the alkyl group may be substituted by a fluorine atom, and in which 1 or 2 or more hydrogen atoms contained in the aryl group, the pyridyl group, the furyl group, the thienyl group, and the thiazolyl group may be substituted by a fluorine atom or an alkyl group having 1 to 10 carbon atoms.

Composition for manufacturing organic semiconductor device

Provided is a solvent for organic transistor production. The solvent has excellent solubility for organic semiconductor materials and enables formation of an organic transistor having high crystallinity. The solvent according to the present invention for organic transistor production includes a solvent A represented by Formula (a). In the formula, Ring Z represents a ring selected from an aromatic carbon ring, a 5- to 7-membered alicyclic carbon ring, and a 5- to 7-membered heterocyclic ring; Rrepresents a group selected from oxo, thioxy, &#x2014;OR, &#x2014;SR, &#x2014;O(C&#x2550;O)R, &#x2014;RO(C&#x2550;O)R, and substituted or unsubstituted amino; and Rrepresents a group selected from hydrogen, C-Calkyl, aryl, and &#x2014;OR, where Rand Rmay be linked to each other to form a ring with one or more carbon atoms constituting Ring Z. 

Solvent for producing organic transistor

Solvent or solvent composition for organic transistor production, which is excellent in solubility of an organic semiconductor material, and which can form an organic transistor high in crystallinity. The solvent or solvent composition for organic transistor is a solvent or solvent composition for organic semiconductor material dissolution, and includes a solvent 'A' represented by the formula (R)N(R)&#x2014;C(&#x2550;O)&#x2014;(R)N(R) wherein Rto Rare the same or different, and each represents a Calkyl group, or Rand Rmay be bound to one another to form a ring together with the &#x2014;N(R)&#x2014;C(&#x2550;O)&#x2014;N(R)&#x2014; moiety as well as an organic semiconductor material.

Solvent or solvent composition for organic transistor production

Provided is an insulating coating composition. The composition is highly safe, in which an organic material to form an insulating film is dissolved highly stably. The composition can form an insulating film by coating, where the insulating film has a low relative permittivity, a high insulation resistance, and high wettability and allows an upper layer to be formed thereon by coating. The insulating coating composition according to the present invention contains a cyclic olefin copolymer and a solvent. The cyclic olefin copolymer is a copolymer between a cyclic olefin and a chain olefin. The solvent includes a compound represented by Formula (1) and having a normal boiling point of 100&#xb0; C. to lower than 300&#xb0; C. In Formula (1), Ring Z is a ring selected from a 5- or 6-membered saturated or unsaturated cyclic hydrocarbon and a benzene ring; and Ris selected from a hydrocarbon group and acyl. Ring Z has a substituent or substituents including the RO group. When Ring Z has two or more substituents, two of the substituents may be linked to each other to form a ring with a carbon atom or atoms constituting Ring Z. 

Composition for forming coat-type insulating film

A novel imidazole compound that yields a surface treatment liquid that is very effective at suppressing migration and oxidation of a wiring surface; a metal surface treatment liquid that contains the imidazole compound; a metal surface treatment method that uses the metal surface treatment liquid; and a laminate production method that uses the surface treatment liquid. A metal is surface-treated using the surface treatment liquid which includes a saturated fatty acid or a saturated fatty acid ester of a specific structure, in which a prescribed position is substituted by an aromatic group of a prescribed structure and an imidazolyl group that may have a substituent group.

Imidazole compound, metal surface treatment liquid, metal surface treatment method, and laminate production method

A novel vinyl-group-containing fluorene compound and a method for producing the same, a polymerizable monomer and cross-linking agent including this compound, a leaving-group-containing fluorene compound, a monovinyl-group-containing fluorene compound, and methods for producing the same. This vinyl-group-containing fluorene compound is represented by formula (1). In the formula, Wand Wrepresent a group represented by formula (2), a group represented by formula (4), a hydroxyl group, or a (meth)acryloyloxy group, Rand Rrepresent a cyano group, a halogen atom, or a monovalent hydrocarbon, and n1 and n2 are integers of 0-4. In formulas (2) and (4), a ring (Z) is an aromatic hydrocarbon ring, X is a single bond or a group represented by &#x2014;S&#x2014;, Ris a single bond or a C1-4 alkylene group, Ris a specific substituent group such as a monovalent hydrocarbon, and m is an integer of 0 or greater. 

Vinyl-group-containing fluorene compound

Provided is a high-purity crystal of an unsaturated carboxylic acid amide compound which is useful as or for fine chemicals such as pharmaceuticals, agricultural chemicals, polymeric materials, functional materials, and intermediates of them. The crystal includes an unsaturated carboxylic acid amide compound represented by Formula (1) in an amount of 95 percent by area or more. In X-ray diffraction, the crystal exhibits peaks at 2&#x3b8; in the range of 29.0 to 30.0 and in at least one range selected from 6.0 to 8.0, 12.0 to 13.5, and 16.5 to 17.5 and exhibits approximately no peak at 2&#x3b8; in the range of 14.0 to 15.0. 

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Himeji, Japan

Yasuyuki Akai