Canon Kabushiki Kaisha

Yasuyoshi Takai

Hiroyuki Katagiri

Ryuji Okamura

Tetsuya Takei

Ryo Hayashi

Yoshio Segi

Hirokazu Ohtoshi

Hidetoshi Tsuzuki

Hideaki Matsuoka

Takao Yonehara

Masahiro Kanai

Masafumi Sano

Masato Ofuji

Norio Kaneko

Takehiko Kawasaki

Hirokazu Otoshi

Shigeru Shirai

Keishi Saito

Hiroshi Echizen

Hiroshi Shimoda

Toshihiro Yamashita

Katsumi Nakagawa

Satoshi Kojima

Kenichi Nagae

Hideo Tamura

Hisato Yabuta

Hideya Kumomi

Shotaro Okabe

Akiya Nakayama

Koichiro Moriyama

Akira Sakai

Kiyofumi Sakaguchi

Hiroshi Sato

Katsumi Abe

Shunichi Ishihara

Atsushi Kandori

Shoji Nishida

Masao Majima

Yasushi Fujioka

Teruo Misumi

Yukiko Iwasaki

Masaaki Iwane

Noboru Toyama

Takehito Yoshino

Koichi Matsuda

Junichiro Hashizume

Toshiyuki Ehara

Hiroyuki Ozaki

Yasuhiro Someda

Hitoshi Murayama

Tadashi Hori

Toru Sato

Takaharu Kondo

Tadashi Sawayama

Noritaka Ukiyo

Katsuya Oikawa

Yusuke Miyamoto

Yuichi Sonoda

Yuzo Koda

Nobuyuki Kaji

Satoshi Takaki

Naoto Okada

Atsushi Yamagami

Hirofumi Taki

Masahiko Tonogaki

Hisae Shimizu

Masatoshi Tanaka

Ayumu Sato

Shigeo Kiso

Hiroshi Izawa

Takeshi Shishido

Masumitsu Iwata

Toru Okumura

Yoshihiro Hasegawa

Hirokazu Ootoshi

Eiichi Kato

An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.

Image forming method using ultrasound and aberration correction method

The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.

Method for manufacturing an electromechanical transducer

Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

Top gate thin film transistor and display apparatus including the same

A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

Method for controlling threshold voltage of semiconductor element

Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

Semiconductor device and display apparatus

A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.

Transfer method of functional region, LED array, LED printer head, and LED printer

A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.

Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.

Method for transferring functional regions, LED array, LED printer head, and LED printer

A sensor includes a movably supported movable element and an opposing member, and sensor detects a relative positional relationship between the movable element and the opposing member which are provided with a spacing therebetween. The opposing member has an impurity-doped portion which is provided at either an opposing portion, which is opposed to the movable element, or an adjoining portion, which adjoins the opposing portion. At least a part of the impurity-doped portion is formed on an opposite surface (that is, opposite to a surface that faces the movable element), from which opposite surface an electrical wiring is led out.

Sensor and method of manufacturing the same

A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same

In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10cmeVor less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In&#x2014;Ga&#x2014;Zn&#x2014;O (IGZO), amorphous In&#x2014;Zn&#x2014;O (IZO) and amorphous Zn&#x2014;Sn&#x2014;O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Method of treating semiconductor element

Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.

Method of forming deposited film and method of forming photovoltaic element

A method for forming a semiconductor device including a semiconductor layer, formed of a silicon-based deposited film containing crystals by plasma-enhanced CVD, includes the steps of applying a bias voltage between a high-frequency electrode and a substrate with the high-frequency electrode being negative when the semiconductor layer is formed; detecting sparks occurring on the high-frequency electrode or the substrate; and controlling at least one condition, selected from the group consisting of high-frequency power, bias voltage, bias current, pressure, gas flow rate, and interelectrode distance, based on the results of the detection so that the number of sparks with durations of 100 ms or more is 1 or less sparks per minute.

Method for forming semiconductor device and method for forming photovoltaic device

A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

Method for forming deposited film and photovoltaic element

A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Exhaust processing method, plasma processing method and plasma processing apparatus

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Nara, Japan

Yasuyoshi Takai