Mitsubishi Electric Corporation

Yasuyoshi Ito

Kazunori Inoue

Nobuaki Ishiga

Kensuke Nagayama

Naoki Tsumura

Shinichi Yano

The present disclosure relates to a method for manufacturing an active matrix substrate. A first laminated film in which a semiconductor film, a first transparent conductive film, and a first metal film are laminated is formed on a substrate. A photoresist pattern having a first part covering a formation area of a channel part of a thin film transistor, a second part covering a formation area of a pixel electrode, and a third part covering formation areas of a source electrode, a drain electrode, and a source line, is formed on the first laminated film. The first metal film, the first transparent conductive film, and the semiconductor film are patterned using the photoresist pattern; the first part is removed and the first metal film and the first transparent conductive film are patterned; and the second part is removed and the first metal film is patterned.

Active matrix substrate and manufacturing method of the same

A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film.

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Kumamoto, Japan

Yasuyoshi Ito