Asm Japan K.k.

Kabushiki Kaisha Toshiba

Nec Corporation

Ulvac, Inc.

Toshiba Digital Solutions Corporation

Yasuyoshi Hyodo

Nobuo Matsuki

Atsuki Fukazawa

Masashi Yamaguchi

Yoshinori Morisada

Seijiro Umemoto

Nobutoshi Fujii

Kazuo Kohmura

Keizo Kinoshita

Nobutaka Kunimi

Kazuyoshi Nishi

Manabu Kato

Naoki Ohara

Taisuke Yamanaka

Yijun Liu

Yosuke Komori

Akihiro Kajita

Mitsuhiro Omura

Jun Iijima

Junichi Hashimoto

Takamichi Tsuchiya

Devendra Kumar

Shinya Kaneko

According to one embodiment, a behavior estimating method for estimating behavior of a person being measured equipped with an activity meter including an acceleration sensor, includes presetting a first angle between a gravitation direction and a direction of action of a standard person being measured, calculating different acceleration waveforms from the activity meter, extracting a second angle between the gravitation direction and the direction of action of the person from the acceleration waveforms, performing a coordinate transformation process among the acceleration waveforms based upon the present first angle and the extracted second angle, and performing behavior estimation of the person using a result of the coordinate transformation.

Behavior estimating method, behavior estimating system, service providing method, signal detecting method, signal detecting unit, and signal processing system

According to one embodiment, an operation estimating method comprises presetting a plurality of operation candidates to be estimated, acquiring acceleration data from an activity meter worn by a person being measured, calculating estimated probabilities of the operation candidates from the acquired acceleration data, selecting an operation candidate corresponding to a maximum probability from the calculated estimated probabilities, as an estimated operation, and correcting the estimated operation in consideration of a past operation performance when the maximum probability of the estimated probabilities is lower than a predetermined value.

Operation estimating method and operation estimating system

An integrated circuit device according to one embodiment includes a plurality of first electrode films stacked spaced from each other, a plurality of second electrode films stacked spaced from each other on the plurality of first electrode films and extending in one direction, a semiconductor pillar penetrating the first electrode films and the second electrode films, a memory film provided between the first electrode films and the semiconductor pillar and capable of storing charge, a gate insulating film provided between the second electrode films and the semiconductor pillar, and a spacer film electrically connecting width-direction edges of the plurality of second electrode films to each other.

Integrated circuit device and method for manufacturing the same

According to one embodiment, a non-volatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, and a variable resistance memory cell which is disposed at an intersection between the first wiring and the second wiring so as to be held between the first wiring and the second wiring and includes a variable resistive element and a rectifying element. In a space between the variable resistance memory cells adjacent to each other, at least a periphery of the variable resistive element is evacuated or filled with a gas.

Non-volatile memory device

A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a silicon compound containing a Si&#x2014;O bond in a gaseous phase, thereby depositing a film containing the fine particles on the processing target; and removing the fine organic particles from the film.

Method for forming porous insulation film

A semiconductor device manufacturing method includes: depositing a first insulating film and a second insulating film on a substrate sequentially and forming a pattern on the second insulating film; forming a silicon film on the pattern; forming a sidewall made of the silicon film by processing the silicon film until a part of the second insulating film is exposed by use of etch-back; removing the second insulating film; and performing dry etching by use of a fluorocarbon-based gas, to process the first insulating film by using the sidewall as a mask. The processing of the first insulating film includes applying on the substrate a self-bias voltage Vdc that satisfies a relational expression of Vdc&#x3c;46x&#x2212;890, where a film thickness of the silicon film that constitutes the sidewall is x nm (19.5&#x2266;x&#x2266;22.1).

Manufacturing method of semiconductor devices

A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

Method of forming silicon-containing insulation film having low dielectric constant and low film stress

A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si&#x2014;O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Method for forming low-k hard film

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Insulation film on semiconductor substrate and method for forming same

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.

Apparatus and method for forming low dielectric constant film

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of &minus;50&deg; C.-100&deg; C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.

Growing community of inventors

Tama, Japan

Yasuyoshi Hyodo