Denso Corporation

Nippondenso Co., Ltd.

Nippon Soken, Inc.

Iwaki Glass Co., Ltd.

Denso Corpora Tion

Yasutoshi Suzuki

Inao Toyoda

Tsuyoshi Fukada

Kunihiko Hara

Seiichiro Ishio

Hiroshi Itoh

Shinya Ohmi

Kenichi Ao

Hiroaki Tanaka

Minekazu Sakai

Hirofumi Uenoyama

Shinji Yoshihara

Keiichi Shimaoka

Norikazu Ohta

Hirofumi Funahashi

Koki Mizuno

Takahiko Yoshida

Nobukazu Oba

Yuichiro Murata

Makiko Sugiura

Hiroshi Okada

Yukihiko Tanizawa

Hirofumi Funabashi

Yoshimi Yoshino

Kenichi Yokoyama

Kazuaki Hamamoto

Kouichi Hoshino

Masakazu Kanosue

Hajime Inuzuka

Hajime Ito

Kazuhiko Kano

Yasuaki Makino

Hiroshi Tanaka

Minoru Murata

Yoshinori Ohtsuka

Toshihisa Suzuki

Motoki Ito

Kazuhisa Ikeda

Hiroaki Kawashima

Hideya Yamadera

Masatoshi Tokunaga

Yoshitsugu Abe

Osamu Mochizuki

Kiyoshi Natsume

Koushu Satoh

Keijiro Inoue

Namoi Awano

Tetsuo Fujii

Toshimasa Yamamoto

Yukihiro Takeuchi

Yukio Tsuzuki

Masahito Imai

Yoshifumi Murakami

Hiroki Noguchi

Ryonosuke Tera

Yasuhiro Horiuchi

Toshio Ikuta

Eishi Kawasaki

Takeshi Shinoda

Masaki Takashima

Yuta Hasebe

Norio Kitao

Takamasa Suzuki

Masakazu Terada

Ryoichi Narita

Ichiro Ito

Koji Hattori

Naomi Awano

Koji Eguchi

Motofumi Suzuki

Hiroshi Omi

Masaki Onoue

Seiichiro Ishiou

Hiroyasu Itoh

Ryo Sato

Toshiki Ito

Hajime Inuzka

The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.

Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon

A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

Method for manufacturing magnetic sensor apparatus

An ultrasonic sensor includes a plurality of converters and a protection component. The plurality of converters convert one of a received ultrasonic wave into an electric signal and an electric signal into an ultrasonic wave for transmission. The plurality of converters are juxtaposed. The protection component protects each of the converters.

Ultrasonic sensor

A micro device having a micro system structure includes a protection film disposed on the micro system structure for protecting from a particle. The protection film includes a first protection film having a Vickers hardness equal to or larger than 2500 Hv or a nano indentation hardness equal to or larger than 13.64 GPa. The first protection film has a thickness in a range between 0.1 &#x3bc;m and 30 &#x3bc;m. The protection film has a total stress defined as a product of a film stress and a film thickness, and the total stress is equal to or smaller than 700 N/m.

Micro device having micro system structure and method for method for manufacturing the same

Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same

A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.

Pressure sensor

A gas sensor includes a semiconductor substrate and a sensing membrane. The sensing membrane is located at the bottom of a recess, which is formed by etching the substrate, and includes a heater, heater extension electrodes, a gas sensitive film, and gas-sensitive-film extension electrodes. A first end of each heater extension electrode is in contact with the heater, and a second end of each heater extension electrode extends outward from the sensing membrane. A first end of each gas-sensitive-film extension electrode is in contact with the gas sensitive film, and a second end of each gas-sensitive-film extension electrode extends outward from the sensing membrane. All of the heater, the heater extension electrodes, and the gas-sensitive-film extension electrodes are made of polycrystalline silicon.

Membrane type gas sensor and method for manufacturing membrane type gas sensor

Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni&#x2014;Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni&#x2014;Fe alloy having a Ni content of 69% or less.

Method for manufacturing magnetic sensor

A semiconductor device includes a semiconductor wafer having a weak portion and a removable passivation cap disposed on the wafer for covering the weak portion. The passivation cap has an absorption coefficient of a laser beam, which is smaller than that of the wafer. The cap has a capability of passing water therethrough. In a case where the device is diced and cut into a plurality of chips, the passivation cap can be removed easily without bonding the cap again. That is because the passivation cap remains one body after dicing.

Semiconductor device having passivation cap and method for manufacturing the same

A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a processing circuit element used for a circuit that processes the electric quantity. Further, a bonding layer is placed on a stand. The semiconductor chip is then placed on the bonding layer and the semiconductor chip is bonded to the stand by sintering the bonding layer at 400&#xb0; C. or lower in order to suppress a change in a characteristic of the processing circuit element.

Method for manufacturing a dynamic quantity detection device

A semiconductor dynamic quantity sensor detects a dynamic force and a fault diagnosis through the use of a single bridge circuit. Sensor output terminals are connected to midpoints between gauge resistors to make a combination of the midpoints at which an equal electric potential is measured when no pressure is applied to a diaphragm of the sensor. Fault diagnostic output terminals are connected to wiring patterns in the same manner as the first output terminals. One of the sensor output terminals has three selectable terminals connected to different positions of the midpoint. One of the diagnostic output terminals also has three selectable terminals connected to different positions of the wiring patterns. Accordingly, an offset voltage of the sensor output and the fault diagnostic output can be adjusted appropriately when one of the selectable terminals are selected as appropriate.

Semiconductor dynamic quantity sensor

A light-receiving element having a light-receiving portion is formed on a chip surface. A digital circuit element, an analog circuit element and a circuit adjusting element are provided for cooperatively processing a detection signal produced from the light-receiving element. And, a light-shielding film is provided for selectively setting a light-receiving region on the chip surface.

Photo sensing integrated circuit device and related circuit adjustment

A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

Pressure sensor having diaphragm

A pressure sensor includes a sensor element, and a resin package member that holds the sensor element. The sensor element is constructed by a semiconductor, and is capable of externally outputting an electric signal in accordance with strain generated when force is applied thereto. The sensor element is directly adhered to the package member via an adhesive layer that has Young's modulus in a range between 2.45&#xd7;10Pa and 2.06&#xd7;10Pa. Further the adhesive layer has a thickness equal to or more than 110 &#x3bc;m. Accordingly, the pressure sensor effectively restricts a variation in a sensor characteristic due to a thermal change.

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Okazaki, Japan

Yasutoshi Suzuki