Hitachi, Ltd.

Other

Hitachi Haramachi Electronics Co., Ltd.

Yasutoshi Kurihara

Kazuji Yamada

Ryuichi Saito

Tadahiko Miyoshi

Kazuhiro Suzuki

Jin Onuki

Isao Kobayashi

Akira Tanaka

Nobuya Koike

Masahiro Koizumi

Yoshihiko Koike

Hiroaki Hachino

Mamoru Sawahata

Tadao Kushima

Takashi Haramaki

Yutaka Higashimura

Shigeki Sekine

Takashi Hosokawa

Hideya Kokubun

Hideo Shimizu

Satoshi Shimada

Takumi Ueno

Mutsuhiro Mori

Takahiro Daikoku

Kenji Miyata

Toshiaki Morita

Kunihiro Fukuda

Yasumasa Matsuda

Tasao Soga

Fumiyuki Kobayashi

Tatsuya Kamei

Toshiyuki Kobayashi

Shin Kimura

Naohiro Momma

Masahiro Okamura

Takuzo Ogawa

Hirokazu Inoue

Tomio Yamada

Kousuke Nakamura

Hirokazu Nakajima

Mitsuru Ura

Tsuneo Endoh

Yasuo Kondo

Kazuhiko Nakagawa

Yoshihiro Suzuki

Nobuyoshi Maejima

Michio Ooue

Kenji Koyama

Mitsuo Yanagi

Tetuo Kosugi

Teruyuki Kagami

Takashi Suzumura

Yukio Kamita

A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Circuit board

In a semiconductor device, the likely occurrence of cracking of a ceramic substrate, and the consequential disconnection of internal layer wiring, due to thermal changes suffered when the semiconductor device is mounted on external wiring boards having different thermal expansion is prevented. The semiconductor device has a ceramic substrate, a wiring pattern formed on a first principal plane and having mounted semiconductor components, an external electrode portion formed on a second principal plane and connected to an external circuit, internal layer wiring formed inside said ceramic substrate to electrically connect said wiring pattern and said external electrode portion via through-hole wiring, and semiconductor components and a resin layer covering said semiconductor components, wherein the internal layer wiring is formed internally with respect to the side of said ceramic substrate with a clearance of at least 0.05 mm.

Semiconductor devices

To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 &mgr;m or larger exists in an interface formed by the composite metal plate and the metal layer.

Composite material member for semiconductor device and insulated and non-insulated semiconductor devices using composite material member

A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Semiconductor device

A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.

Semiconductor module

Semiconductor device having power semiconductor elements

A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.

Heat-conducting cooling module

In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.

Insulated type semiconductor devices

In a semiconductor device, an active element is mounted on a supporter made of silicon carbide SiC. Since the thermal expansion coefficient of SiC is nearly equal to that of the semiconductor element, the integration of the element and the supporter will not give rise to thermal stresses in the element. Since silicon carbide has high degrees of thermal dissipation and conduction, the supporter of SiC can effectively dissipate heat generated in the semiconductor element. And since SiC has a high electrical conductivity and a high mechanical strength and is also light, it can be used as electrodes for the semiconductor element.

Semiconductor device using SiC as supporter of a semiconductor element

A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.

Semiconductor transducer

A photocoupler wherein a semiconductor photo-responsive element and a semiconductor light emitting element are arranged on an insulating substrate in such a mannner that they oppose each other with a P-N junction of the latter being perpendicular to a light receiving face of the former. At least one of the elements is connected with electric wiring on the insulating substrate by the use of a brazing material at three or more points which lie on an identical plane of the insulating substrate but do not lie on one straight line.

Photocoupler

A photo-coupler semiconductor device includes a semiconductor light emitter and a semiconductor light detector coupled optically with each other through an optical guide. A portion of the optical guide close to the semiconductor light detector is made of glass. The glass portion of the optical guide is brought into intimate contact with a glass layer which is formed on a light sensitive region of the semiconductor light detector. The intimate contact is made by melting the glass portion on the glass layer.

Photo-coupler semiconductor device and method of manufacturing the same

A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.

Gallium arsenide infrared light emitting diode

A photo coupler comprises a multilayer insulating substrate having a cavity on a predetermined portion and a first conductive layer at the bottom of the cavity and a second conductive layer on one surface of the insulating substrate. A light emitting diode is disposed in the cavity with a substantial light emitting zone thereof being in the cavity and is electrically connected to the first conductive layer. A photo responsive device is placed above the cavity on the substrate with the photo sensitive surface of the device facing the light emitting diode and being electrically connected to the second conductive layer.

Photo coupler

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Hitachinaka, Japan

Yasutoshi Kurihara