Sony Corporation

Yasutoshi Komatsu

Yutaka Hayashi

Mikio Mukai

Yoshikazu Murakami

Takashi Otobe

Yuzuru Yanagisawa

Shunkichi Shimizu

Impurity profiles Pi,and Ps,are determined for the same conditions by a reference acquiring means and a simulation capable of producing a result faster than the reference acquiring means, respectively. Errors between the impurity profile Pi,determined by the reference acquiring means and the impurity profile Ps,determined by the simulation are determined. An impurity profile Psx is calculated for another kind of conditions by the simulation, and a new impurity profile Psx&prime; is calculated by correcting the impurity profile Psx so as to reflect the errors.

Semiconductor simulation method

A memory cell with a stored charge on its gate, comprising (A) a channel forming region, (B) a first gate formed on an insulation layer formed on the surface of the channel forming region, the first gate and the channel forming region facing each other through the insulation layer, (C) a second gate capacitively coupled with the first gate, (D) source/drain regions formed in contact with the channel forming region, one source/drain region being spaced from the other, and (E) a non-linear resistance element having at least two ends with one end connected to the first gate.

Memory cell with stored charge on its gate and process for the

A semiconductor memory cell includes a read-out transistor of a first conductivity type which has source/drain regions constituted by a second conductive region and a third semiconducting region, a channel forming region constituted by a surface region of a second semiconducting region, and a conductive gate formed on a barrier layer; a switching transistor of a second conductivity type which has source/drain regions constituted by a first conductive region and the second semiconducting region, a channel forming region constituted by a surface region of a first semiconducting region, and a conductive gate formed on a barrier layer; and a current controlling junction-field-effect transistor of a first conductivity type which has gate regions constituted by a third conductive region and a portion of the second semiconducting region, a channel region constituted by a portion of the third semiconducting region, and one source/drain region extended from one end of the channel region, being constituted by a portion of the third semiconducting region, and another source/drain region extended from the other end of the channel region, being constituted by a portion of the third semiconducting region.

Semiconductor memory cell and its fabrication process

An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.

Insulated-gate field effect transistor and method for driving thereof

Reception and transmission of radio frequency signals is performed between the rotary portion and the stationary portion via an electromagnetically coupled portion in which a microstrip formed along substantial one lap of the circumference having a length equivalent to an odd multiple of substantially 1/2 of the electrical wave length of the transmitted radio frequency signal is electromagnetically coupled with a microstrip having a length equivalent to an add multiple of substantially 1/4 of the electrical wave length of the radio frequency signal.

Rotary coupler

A rotary coupler is disclosed, in which a rotor and a non-rotor are provided on their facing surfaces with microstrip lines which are disposed along circles concentric with the axis of the rotor and facing one another. High frequency signals are transferred between the microstrip line on the side of the rotor and the microstrip line on the side of the non-rotor.

A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.

Phase detectors for detecting a mutual phase difference between two

Dielectric resonator stabilized micro-strip oscillators in which micro-strip lines are provided to the first, second and third terminals of the active element for oscillation and in which a dielectric resonator coupled at a predetermined position to one of the micro-strip lines which is not used as an output terminal is disclosed. In the integrated microwave oscillator, there is an active element for oscillation such, for example, as GaAs-FET having first, second and third terminals. Micro-strip lines connect to the first and third terminals, and a micro-strip line connected between the first and third terminals form a feedback circuit, together with the first mentioned micro-strip lines. A dielectric resonator is coupled to one of these micro-strip lines which is not used as an output terminal at a predetermined location.

Dielectric resonator stabilized micro-strip oscillators

A surface acoustic wave filter having a piezo-electric substrate with a major surface and input and output transducers, each haing a plurality of finger electrodes formed on the major surface to define a propagation path for surface acoustic waves. Finger electrodes of one of the transducers have a step-like configuration to divide the surface wave propagation path into a plurality of surface wave propagation channels. The phase differences of the channels and the length of the steps of the finger electrodes are selected to minimize the multiple reflection echo between the input and output transducers to reduce ripples in the pass band.

Growing community of inventors

Kanagawa, Japan

Yasutoshi Komatsu