Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Seiko Co., Ltd.

Yasutoshi Kawaguchi

Akihiko Ishibashi

Toshiya Yokogawa

Isao Kidoguchi

Yoshiaki Hasegawa

Gaku Sugahara

Nobuyuki Otsuka

Ayumu Tsujimura

Toshitaka Shimamoto

Yasuo Kitaoka

Hisashi Minemoto

Kiyoshi Ohnaka

Yasuhito Takahashi

Atsushi Matsubara

Masaaki Takeda

A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Nitride semiconductor device and production method thereof

An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2&#xd7;10to 2&#xd7;10cm. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.

Semiconductor light emitting element, group III nitride semiconductor substrate and method for manufacturing such group III nitride semiconductor substrate

A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

Nitride semiconductor laser and method for fabricating the same

A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate; step (B) of forming on the substratea plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate; step (C) of selectively growing AlGaInN crystals (0&#x2266;x, y, z&#x2266;1: x+y+z=1)on the upper faces of the plurality of stripe ridges, the AlGaInN crystals containing an n-type impurity at a first concentration; and step (D) of growing an AlGaInN crystal (0&#x2266;x', y&#x2032;, z&#x2032;&#x2266;1:x&#x2032;+y&#x2032;+z&#x2032;=1)on the AlGaInN crystals, the AlGaInN crystalcontaining an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlGaInN crystalswith the AlGaInN crystalto form one nitride semiconductor layer

Nitride semiconductor device and process for producing the same

A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structurewith electrical conductivity. The principal surface of the substrate structurehas at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum &#x3a3;X of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum &#x3a3;Y of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality &#x3a3;X/&#x3a3;Y&#x3e;1.0.

Nitride-based semiconductor device and method for fabricating the same

A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.

The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.

Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

A nitride semiconductor device comprising a substrate () having trenches () each formed of a cavity and peaks () formed from a group III nitride on the surface thereof; a nitride semiconductor layer () formed on the substrate (); and a nitride semiconductor multilayered structure that is formed on the nitride semiconductor layer () and has an active layer, wherein the lattice constant of the substrate () is different from that of the group III nitride substance (), the substrate () has a mask () formed from a dielectric (), the mask () is formed only on the side surfaces of the peaks (), the upper surfaces of the peaks () are exposed and the substrate () is exposed in the trenches (), a height Lof the mask () is not less than 50 nm and not more than 5000 nm, a width Lof the trench () is not less than 5000 nm and not more than 50000 nm, and an aspect ratio L/Lof the trenches () is not less than 0.001 and not more than 1.0. This structure enhances the reliability of the nitride semiconductor devices.

Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

Nitride semiconductor, method for manufacturing the same and nitride semiconductor device

The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of Al Ga N (0&lE;x&lE;1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of Al Ga In N (0<u&lE;1, 0&lE;v&lE;1, 0&lE;w&lE;1, u&plus;v&plus;w&equals;1) over the first semiconductor layer. In the step (1), the mole fraction x of Al of the first semiconductor layer is set so that the lattice constant of the first semiconductor layer at room temperature substantially matches with the lattice constant of the second semiconductor layer in the bulk state after thermal shrinkage or thermal expansion.

Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device

A method for fabricating a nitride semiconductor device comprising steps of forming a low-temperature deposited layer composed of a Group III-Group V nitride semiconductor containing at least Al onto a surface of substrate ( ) at a first temperature; subjecting the low-temperature deposited layer to heat treatment at a second temperature, which is higher than the first temperature, and converting the low-temperature deposited layer into a faceted layer ( ); initially growing a GaN based semiconductor layer ( ) onto a surface of the faceted layer at a third temperature; and fully growing the GaN based semiconductor layer at a fourth temperature that is lower than the third temperature. By employing the method for fabricating a nitride semiconductor device according to the present invention, it is possible to provide a nitride semiconductor device with high quality and high reliability.

Method for fabricating a nitride semiconductor device

Semiconductor light-emitting device, method for fabricating the same, and method for driving the same

In an apparatus having an insulative substrate, a power circuit is mounted on one surface of the substrate and connected to receive power from a mains supply for rectifying the AC energy of the supply and supplying the rectified energy to a pair of power lines. A high frequency source is mounted on the same surface as the power circuit and electrically connected to the power lines for converting the rectified energy into oscillation energy. A shield casing, which is electrically connected to one of the power lines which is lower in impedance than the other, encases the high frequency source. A conductor, printed on the other surface of the substrate, is substantially aligned with a portion of the shield casing which is positioned between the power circuit and the high frequency source, the conductor being electrically connected to the power line having the lower impedance to suppress radiation which would otherwise leak through a gap between the shield casing and the substrate.

Growing community of inventors

Osaka, Japan

Yasutoshi Kawaguchi