Fujifilm Corporation

Fuji Photo Film Company, Limited

Yasutomo Kawanishi

Kenji Wada

Sou Kamimura

Ryo Suzuki

Tadashi Ito

Takanori Hioki

Tomotaka Tsuchimura

Kazuyoshi Mizutani

Katsumi Kobayashi

Katsuyuki Watanabe

Tomoya Sasaki

Mitsunori Hirano

Tokuju Oikawa

Katsuhiro Yamashita

Takeshi Suzumoto

A resist composition includes (A) a compound represented by the following formula (I): wherein each of Rto Rindependently represents a hydrogen atom or a substituent, provided that at least one of Rto Ris a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and Xrepresents an anion containing a proton acceptor functional group.

Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound

A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III): 

Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same

A photosensitive composition, which comprises a compound represented by formula (I):  wherein Rto Reach independently represents a hydrogen atom or a substituent, and at least one of Rto Ris a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and Xrepresents a counter anion; and a pattern-forming method using the photosensitive composition.

Sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition

A photosensitive composition includes (A) a compound represented by the following formula (I): wherein Rto Reach independently represents a hydrogen atom or a substituent, Z represents a single bond or a divalent linking group, and Xrepresents an anion containing a proton acceptor functional group.

Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition

A photosensitive composition comprises (A) a specific compound, which is excellent in sensitivity, resolution, and defocus latitude (DOF), and a pattern-forming method using the photosensitive composition is provided.

Photosensitive composition and pattern-forming method using the same

A resist composition, includes: (B) a polymer having a group capable of decomposing under an action of an acid and having a weight average molecular weight of 1,000 to 5,000, of which solubility in an alkali developer increases under an action of an acid; and (Z) a compound containing a sulfonium cation having a structure represented by formula (Z-1):  wherein Yto Yeach independently represents a hydrogen atom or a substituent, and adjacent members of Yto Ymay combine with each other to form a ring; and Z represents a single bond or a divalent linking group.

Resist composition and pattern forming method using the same

A positive resist composition containing a compound including a sulfonium cation having a structure represented by the formula (Z-I) as defined herein, a low molecular weight compound which increases solubility in an alkali developing solution by an action of an acid, and a compound which generates a compound having a structure represented by the formula (A-I) as defined herein upon irradiation of an actinic ray or a radiation.

Positive resist composition and pattern formation method using the same

The invention provides a resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a compound for use in the resist composition and a pattern forming method using the resist composition, which are a resist composition comprising (A) a sulfonium salt represented by the following formula (I); and a pattern forming method using the resist composition: wherein

Resist composition, compound for use in the resist composition and pattern forming method using the resist composition

A high-sensitivity silver halide photographic light-sensitive material is provided, which is a silver halide photographic light-sensitive material, in which a dye chromophore is adsorbed in multiple layers on the surface of a silver halide grain and at least one of the dye chromophore-containing compounds satisfies: a specific condition relating to the aggregation property, hydrophilicity/hydrophobicity or J-aggregation property; or a specific structure.

Silver halide photographic light-sensitive material

Disclosed are a silver halide photographic light-sensitive material comprising silver halide containing a metal complex having a cyanide ligand in a silver halide emulsion layer and comprising a hydrazine compound having an onium group in the molecule, and a method of developing the silver halide photographic light-sensitive material with a developer having a pH of 9.0-11.0. The silver halide photographic light-sensitive material of the present invention can provide high sensitivity, high processing stability and high contrast images.

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Shizuoka, Japan

Yasutomo Kawanishi