Canon Kabushiki Kaisha

Yasutomo Fujiyama

Osamu Kamiya

Shotaro Okabe

Kyosuke Ogawa

Takao Yonehara

Kiyofumi Sakaguchi

Takanori Watanabe

Akira Okita

Hideya Kumomi

Kazuo Kokumai

Takashi Kurokawa

Toru Takisawa

Keijiro Nishida

Senju Kanbe

Mitsuhiro Ishii

Provided is a suitable cleaning method of a porous semiconductor substrate without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.

Cleaning methods of porous surface and semiconductor surface

This invention relates to a head-mounted stereoscopic image display apparatus to be mounted on the head portion of an observer, including display means for displaying a stripe image formed by dividing right and left parallax images that constitute a stereoscopic image into stripe pixels, and alternately arranging the right and left stripe pixels in a predetermined order, an image separation optical system disposed in front of the display means and adapted to separate light beams outgoing from the right and left stripe pixels, and a concave mirror adapted to reflect the light beams from the image separation optical system so as to allow the observer to observe virtual images of the parallax images.

Head-mounted stereoscopic image display apparatus

An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for supporting a peripheral portion of the semiconductor substrate such that a surface portion of a semiconductor substrate remains exposed, a support jig which includes a tapered hollow portion for supporting the sealing member, and a device for introducing a fluid of gas or liquid into the tapered hollow portion. When the fluid is introduced, the sealing member is pressed against and brought into hermetic contact with the tapered hollow portion and with the entire peripheral portion of the semiconductor substrate such that the electrolytic solution is separated into electrically isolated parts by coordination between the semiconductor substrate, the sealing member, and the support jig. Anodization of the semiconductor substrate may then be carried out, such as by producing a porous silicon layer on the surface of the semiconductor substrate.

Anodization apparatus with supporting device for substrate to be treated

An improved apparatus for the formation of a functional deposited film using a microwave plasma chemical vapor deposition process characterized in that a microwave transmissible dielectric material is used for the microwave introducing window, and the window has a structure wherein the dielectric material is divided into blocks of the same or different dielectric materials having a specific inductive capacity of more than 1.0. In this way it is possible to adjust not only the resonant frequency characteristics but also the electromagnetic resonant mode of the window to resonate with the microwave oscillation frequency so as to enhance microwave transmission.

Apparatus with layered microwave window used in microwave plasma

In a photographing apparatus such as a single lens reflex camera, metering photoelectric conversion elements are provided in the optical path of an imaging optical system or a finder optical system and the line width of the pattern forming the elements is set to a width undiscernable by the human eye. Thus, with such metering photoelectric conversion elements, no irregularity of the quantity of amount is caused in the image observed through the finder or the image photographed.

Photographing apparatus

An apparatus for Plasma CVD process comprises a vacuum chamber in which a plural number of substrates being placed along a circle and separately from each other, and means for passing a starting gas or an evacuating gas through gaps between the adjacent substrates.

Apparatus for plasma CVD

An improved apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process is characterized in that the relative setting angle between waveguides confronting each other is set to be 60.degree. or 240.degree. in the counterclockwise direction, which makes it possible to stably introduce the microwave energy into the vacuum chamber simultaneously from the plural microwave power sources without any interference among them.

Apparatus for the formation of a functional deposited film using

The surface of an element of a vacuum apparatus is coated with a film formed by a flame spraying method.

Method for treating surface of construction material for vacuum

A film forming apparatus utilizing discharge to accomplish film formation is provided with a cover electrode movable back and forth and a gas supply pipe. By moving the cover electrode, the cover electrode and a substrate containing cassette in which a substrate for film formation is contained and which is conveyed to a predetermined film forming position are electrically connected, and discharge is caused in the substrate containing cassette.

Film forming apparatus

There is disclosed layer forming apparatus for forming a deposition layer on a substrate by means of electric discharge, comprising a supporting electrode, and a cassette of a structure capable of accommodating therein a substrate for layer formation and being inserted into said supporting electrode and electrically connected therewith to cause electric discharge in said cassette.

Layer forming apparatus

An apparatus and a process for mass production of films by vacuum deposition comprise a substrate charging stage which is evacuated, an interconnecting stage which is positioned adjacent to said substrate charging stage and is evacuated, and a film forming stage which is removably attached to the interconnecting stage and is evacuated independently of the interconnecting stage.

Apparatus and process for mass production of film by vacuum deposition

There is disclosed a plasma CVD apparatus for depositing a film on a substrate by creating a discharge between the substrate and an electrode arranged to face the substrate, wherein the electrode is constructed by a plurality of hexagonal pillar electrodes arranged in a honeycomb structure.

Plasma CVD apparatus

A gaseous phase method accumulated film manufacturing apparatus has one or more reaction furnace installation device on which a plurality of reaction furnaces for forming an accumulated film on a substrate by the gaseous phase method are movably installed, and one or more substrate conveying unit for conveying the substrate to the reaction furnaces.

Gaseous phase method accumulated film manufacturing apparatus

A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance movable between the vacuum containers exclusively for use for processing. The vacuum containers are provided with opening-closing gates which can be connected to each other. The substrate to be processed is transferably movable between the vacuum containers exclusively for use for processing and the vacuum container exclusively for use for conveyance.

Vacuum processing apparatus

An improvement in a vacuum plasma treating apparatus having a reaction chamber partly formed of electric insulating material subject to corrosion by a fluorine or chlorine containing gas plasma, which improvement being that the electric insulating material subject to corrosion comprises a sintered ceramic material containing alumina as a primary ingredient.

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Atsugi, Japan

Yasutomo Fujiyama