Denso Corporation

Other

Yasutomi Asai

Takashi Nagasaka

Norihisa Imaizumi

Tohru Nomura

Tetsuto Yamagishi

Shinji Ota

Takashi Yamazaki

Takashi Yamasaki

Nozomu Akagi

Naohiko Hirano

Hiroshi Ishino

Akiyoshi Asai

Yukihiro Maeda

Yasuhiro Kitamura

Hirokazu Imai

Atsushi Komura

Yuji Ootani

Shinya Terao

Shotaro Miyawaki

Tetsuo Nakano

Kenichi Gohara

Syoichi Nakagawa

Yoshiaki Shimojo

Electrode pads disposed on a first surface of a semiconductor element include a first pad located close to a corner and a second pad located apart from the corner compared with the first pad. A first wire connected to the first pad has a smaller Young's modulus than a second wire connected to the second pad. A thickness of an intermetallic compound layer formed by the first wire and the first pad is larger than a thickness of an intermetallic compound layer formed by the second wire and the second pad.

Semiconductor device

An electronic device includes: a substrate having first and second surfaces, wherein the first surface is opposite to the second surface; a first electronic element mounted on the first surface of the substrate; a second electronic element mounted on the second surface of the substrate; and a resin mold sealing the first electronic element and the first surface of the substrate. The resin mold further seals the second electronic element on the second surface of the substrate. The second surface of the substrate has a portion, which is exposed from the resin mold. The second electronic element is not disposed on the portion of the second surface.

Semiconductor device with resin mold

A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.

Semiconductor device including double-sided multi-electrode chip embedded in multilayer wiring substrate

A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.

Method for manufacturing semiconductor device including semiconductor elements with electrode formed thereon

A substrate has a first surface and a second surface. A plurality of pads is formed on the first surfaces. Each pads has a Cu plating layer and an Au plating layer that is directly formed on the Cu plating layer. Al wiring or Au wiring is bonded with the pads. The thickness of the Au plating layer that is bonded with the Al wiring is less than 0.5 &mgr;m. Thickness of the Au plating layer that is bonded with the Au wiring is 0.05 &mgr;m or more.

Electrical device having metal pad bonded with metal wiring and manufacturing method thereof

In a mounting structure of a flip chip IC, the flip chip IC is mounted on an alumina laminated substrate through conductive lands of the substrate and bumps of the flip chip IC. A space between the flip chip IC and the substrate is filled with resin. Further, inspection lands are provided on the substrate for inspecting the flip chip IC, and are electrically connected to the conductive lands through vias and inside wires provided in the substrate. That is, the inspection lands are connected to the conductive lands to bypath an edge portion of the resin. As a result, separation of the resin from the substrate can be prevented.

Mounting structure of semiconductor element

A mounting structure includes a laminated ceramic capacitor mounted on a mounting substrate. The laminated ceramic capacitor includes a main body chip made by a ceramic dielectric, internal layer electrodes, and pair of terminal electrodes. The mounting substrate is made by alumina substrate, and has a pair of substrate electrodes made by copper plating. The laminated ceramic capacitor is mounted on the mounting substrate by using an Ag paste. Here, the substrate electrode is set to be smaller than the Ag paste. That is, the Ag paste is extruded from the terminal electrodes and the substrate electrode so as to contact to both of the main body chip and the mounting substrate. Because the Ag paste has a high adhesive strength compared to that when it is bonded with a metal, total adhesive strength can be improved. Consequently, the reliability of mounting can be improved.

Mounting structure of electronic parts and mounting method of electronic parts

A multilayer circuit board for holding a flip chip thereon includes laminated first to fourth substrates. A first pattern integrated portion having a locally high pattern density is provided on the second substrate. Further, on the fourth substrate which is disposed on an opposite side of the second substrate with respect to a center in a laminated direction of the circuit board, a second pattern integrated portion having a locally high pattern density is disposed to correspond to the first pattern integrated portion. Accordingly, a local warp can be prevented from being produced on the mounting surface of the multilayer circuit board when the circuit board is manufactured by baking.

Multilayer circuit board having no local warp on mounting surface thereof

Via portions are formed in a first green sheet for a first layer of a laminated substrate. Then, conductive lands are formed on a surface of the first green sheet and a wiring pattern is formed on a back face of the first green sheet to be connected to the conductive lands through the via portions. The thus formed first green sheet is joined to a second green sheet having via portions therein so that the wiring pattern of the first green sheet contacts the via portions of the second green sheet. In this case, by forming the wiring pattern on the back face of the first green sheet, lamination slippage of the wiring pattern caused by lamination of the first and second green sheets can be prevented.

Method for manufacturing ceramic laminated substrate

A multi-layered substrate capable of lowering transient and steady heat resistances. A metal serving as a heat conductor having good heat conducting property is fitted in the uppermost insulating layer, and a power element is disposed on the fitted metal. The heat generated by the power element is conducted to the metal in the uppermost insulating layer and is radiated. The metal can be composed of a mixture of molybdenum particles or tungsten particle having a high melting point and aluminum particles.

Growing community of inventors

Okazaki, Japan

Yasutomi Asai