Sanyo Electric Co., Ltd.

Future Light, LLC

Yasuto Miyake

Masayuki Hata

Ryoji Hiroyama

Yasumitsu Kuno

Yasuyuki Bessho

A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device () includes a nitride-based semiconductor device layer () formed on a main surface of a (1-100) plane of a substrate (), having a light-emitting layer () having a main surface of a (1-100) plane, a facet () formed on an end of a region including the light-emitting layer () of the nitride-based semiconductor device layer (), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (), and a reflection surface () formed on a region opposed to the facet () of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (), extending in a direction inclined at an angle &#x3b8;(about) 62&#xb0; with respect to the facet ().

Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer

A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Method of manufacturing semiconductor device and semiconductor device

A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.

Nitride-based semiconductor device and method of manufacturing the same

A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.

Growing community of inventors

Hirakata, Japan

Yasuto Miyake