Fujitsu Corporation

Olympus Optical Company, Ltd.

Yasutake Hirachi

Toshio Yamamoto

Kohki Hikosaka

Yuji Awano

Norio Hidaka

Yoshio Aoki

Jun-ichi Ishibashi

Jun Fukaya

Norio Hidada

A semiconductor module having a built-in antenna element for use in a system of a band of millimeter-waves or quasi-millimeter-waves comprises a substrate, an antenna element, a semiconductor integrated circuit, and a hermetically sealing portion. The antenna element is mounted on one side of the substrate. The semiconductor integrated circuit is also formed on the same side of the substrate as of the antenna element. The semiconductor integrated circuit includes at least either of a transmitter signal processing circuit composed mainly of an amplifier circuit and a frequency converter circuit for processing a signal which is exploited in the system of the band of millimeter-waves or quasi-millimeter-waves and transmitted to the antenna element, and a receiver signal processing circuit composed mainly of an amplifier circuit and a frequency converter circuit for processing a signal which is received by the antenna element and exploited in the system of the band of millimeter-waves or quasi-millimeter-waves. The hermetically sealing portion is designed for hermetically sealing the antenna element and the semiconductor integrated circuit formed on the substrate within a common space defined by a boundary surface or the side of the substrate while the transmissivity of radio waves to the antenna element for the system of the band of millimeter-waves or quasi-millimeter-waves is maintained.

Hermetically sealed semiconductor module composed of semiconductor integrated circuit and antenna element

A semiconductor module having a compact antenna element capable of providing desired directivity therein has been disclosed. When an electromagnetic-wave radiation window has the capability of a lens, directivity can be set arbitrarily. For improving directivity, a convergent lens for converging millimeter waves or quasi millimeter waves is employed. For impairing directivity, a divergent lens is employed. In the case of the convergent lens, a direction in which radio waves are radiated or received by the antenna element can be set by deviating the center axis of the lens from the center of the antenna element.

Semiconductor module having antenna element therein

A high-speed heterojunction transistor includes a first region for controlling current, and a second region for receiving carriers which have passed the first region. An energy level difference between a lowermost valley of energy and an upper valley of energy in the conduction band of a semiconductor material constituting the second region is greater than that of a semiconductor material constituting the first region.

High-speed heterojunction transistor

A field effect transistor includes a semiconductor substrate, first and second semiconductor layers formed on the semiconductor substrate, and third semiconductor layers located between the first and second semiconductor layers. The third semiconductor layers have a forbidden band width narrower than those in the first and second semiconductor layers and form a quantum well. The third semiconductor layers include a doping layer such as planar-doping or high doping, and a channel is formed in the third semiconductor layers along the quantum well. The electrons supplied from the doped layer are confined by the quantum well and form a quasi-two-dimensional electron gas.

Field effect transistor

A package for an integrated circuit having conductor patterns which can be connected to an external circuit to connect the integrated circuit to the external circuit. The package includes a dielectric plate which is provided on one end face with a grounding conductor. The conductor patterns are provided on the opposite end face of the dielectric plate. The dielectric plate is provided with conductor poles which are located between the conductor patterns and which extend through the thickness of the dielectric plate to be connected to the grounding conductor.

Package for integrated circuit

A microwave monolithic integrated circuit (MMIC) device includes a transistor and a capacitor respectively formed on the same semiconductor substrate. The transistor has at least one high resistivity semiconductor layer which forms a heterojunction with an activating layer or the semiconductor substrate. The capacitor has a dielectric layer formed by the high resistivity semiconductor layer of the transistor.

Growing community of inventors

Musashino, Japan

Yasutake Hirachi