Murata Manufacturing Co., Ltd.

Yasutaka Sugimoto

Yoichi Moriya

Naoya Mori

Osamu Chikagawa

Sadaaki Sakamoto

Jun Urakawa

Hiroshi Takagi

Tomoki Kato

Yutaka Senshu

Hirofumi Sunahara

Takahiro Takada

Hiroaki Taira

Takaki Murata

Hiroyuki Hirooka

Tetsuo Kanamori

Takahiro Hayakawa

Daisuke Ito

Kazuhiro Kaneko

Seiji Kanba

Hisatake Okamura

Naoki Mizoguchi

Takayuki Tsukizawa

Kazuo Kishida

Yuji Kintaka

Tsuyoshi Katsube

Saneaki Ariumi

Tsutomu Tatekawa

Hisao Hayafuji

Mitsuo Ariie

Hitoshi Takagi

Hiroshige Adachi

Yuki Takemori

Tomoshige Furuhi

Takayuki Kawano

Hideyo Yamashiro

Yukihiro Yagi

Kimihide Sugou

Nobukazu Suzuki

Satoshi Ohga

Satoshi Ohaga

An active material includes, as constituent elements, silicon, oxygen, a first element, a second element, and a third element. The first element includes boron, phosphorus, or both. The second element includes at least one of an alkali metal element, a transition element, or a typical element. The typical element excludes silicon, oxygen, boron, phosphorus, an alkali metal element, and an alkaline earth metal element. The third element includes an alkaline earth metal element. The content of silicon with respect to all the constituent elements excluding oxygen and carbon is 60 at % or greater and 98 at % or less. The content of the first element with respect to all the constituent elements excluding oxygen and carbon is 1 at % or greater and 25 at % or less. The content of the second element with respect to all the constituent elements excluding oxygen and carbon is 1 at % or greater and 34 at % or less. The content of the third element with respect to all the constituent elements excluding oxygen and carbon is 0 at % or greater and 6 at % or less. A first peak is detected in an XPS spectrum of Si2p relating to the active material. The XPS spectrum of Si2p is measured using X-ray photoelectron spectroscopy (XPS). The first peak includes an apex within a range of a binding energy of 102 eV or greater and 105 eV or less, and a shoulder on a smaller binding energy side of the apex. A second peak is detected in a Raman spectrum relating to the active material. The Raman spectrum is measured using Raman spectroscopy. The second peak includes an apex within a range of a Raman shift of 435 cmor greater and 465 cmor less.

Active material, method of manufacturing the same, electrode, and secondary battery

A temperature detection circuit () includes a first transistor (Q) of a bipolar type, and a second transistor (Q) of a bipolar type, wherein the first transistor (Q) and the second transistor (Q) form a current mirror circuit (), and the temperature of the amplifier circuit () is detected based on a temperature change of the first transistor (Q) and the second transistor (Q).

Temperature detection circuit

An antenna module () includes a dielectric substrate () having a multilayer structure, a first radiation electrode (), a second radiation electrode (), and a ground electrode (GND). The second radiation electrode () is arranged between the first radiation electrode () and the ground electrode (GND) in a lamination direction of the dielectric substrate (). In the dielectric substrate (), a hollow portion () is disposed in at least a portion between the first radiation electrode () and the second radiation electrode ().

Antenna module, communication device, and array antenna

An amplifier circuit includes an input terminal to which a radio frequency signal is input, an amplifier transistor that has a control terminal and amplifies the radio frequency signal, a bias circuit that includes an emitter-follower circuit or a source-follower circuit and supplies a bias current to the control terminal of the amplifier transistor, an inductor arranged in series between an emitter of the emitter-follower circuit and the control terminal of the amplifier transistor or between a source of the source-follower circuit and the control terminal of the amplifier transistor, and a variable resistance circuit connected to the inductor.

Amplifier circuit and amplifier device

The laminate of the present disclosure is a laminate including multiple glass ceramic layers each containing quartz and a glass that contains SiO, BO, AlO, and MO, where M is an alkali metal. An AlOcontent of a surface layer portion of the laminate is higher than an AlOcontent of an inner layer portion of the laminate, and a MO content of the surface layer portion is lower than a MO content of the inner layer portion.

Layered body and electronic component

The laminate of the present disclosure includes multiple glass ceramic layers each containing quartz and a glass that contains SiO, BO, AlO, and MO, where M is an alkali metal. The B concentration of a surface layer portion of the laminate is lower than the B concentration of an inner layer portion of the laminate.

Laminate, electronic component, and laminate production method

The glass ceramic material of the present disclosure contains a glass that contains SiO, BO, AlO, and MO, where M is an alkali metal, and a filler that contains quartz, AlO, and ZrO. The glass ceramic material contains the glass in an amount of 57.4% by weight or more and 67.4% by weight or less, the quartz in the filler in an amount of 29% by weight or more and 39% by weight or less, the AlOin the filler in an amount of 1.8% by weight or more and 5% by weight or less, and the ZrOin the filler in an amount of 0.3% by weight or more and 1.8% by weight or less.

Glass ceramic material, laminate, and electronic component

A power module includes a power wiring line provided with a power element, a glass ceramic multilayer substrate provided with a control element to control the power element, and a highly heat-conductive ceramic substrate made of a ceramic material having higher thermal conductivity than a glass ceramic contained in the glass ceramic multilayer substrate. The power wiring line is disposed on the highly heat-conductive ceramic substrate, and the glass ceramic multilayer substrate is disposed directly on the highly heat-conductive ceramic substrate.

Power module and method for manufacturing power module

A composite ceramic multilayer substrate includes a glass ceramic insulating layer including a wiring layer and a highly thermally conductive ceramic insulating layer made of a ceramic material having a higher thermal conductivity than the glass ceramic insulating layer. The glass ceramic insulating layer is provided on at least one main surface of the highly thermally conductive ceramic insulating layer directly and/or with a wiring layer interposed therebetween. When viewed in a direction perpendicular or substantially perpendicular to a main surface of the composite ceramic multilayer substrate, the composite ceramic multilayer substrate includes at least one heat generating element-mounting portion surrounded by the glass ceramic insulating layer and at which a heat generating element-mounting wiring line provide on the main surface of the highly thermally conductive ceramic insulating layer is exposed.

Composite ceramic multilayer substrate, heat generating element-mounting module, and method of producing composite ceramic multilayer substrate

Provided is a detector circuit that includes: a first transistor that has an alternating current signal input to a base thereof, and that outputs a first detection signal that depends on the alternating current signal from a collector thereof; a second transistor that has the first detection signal input to a base thereof, and that outputs a second detection signal that depends on the first detection signal from a collector thereof; and an alternating current signal path along which the alternating current signal is supplied to the base of the second transistor.

Detector circuit

A mixed powder for a low temperature cofired ceramic material that contains 65 to 80 parts by weight of SiO, 5 to 25 parts by weight of BaO, 1 to 10 parts by weight of AlO, 0.1 to 5 parts by weight of MnO, 0.1 to 5 parts by weight of BO, and 0.1 to less than 3 parts by weight of LiO. The ceramic sintered body is used for, for example, ceramic electronic components, e.g., a multilayer circuit board or a coupler.

Low temperature cofired ceramic material, ceramic sintered body, and ceramic electronic component

In a semiconductor device including a semiconductor element that produces heat and a substrate on which the semiconductor element is mounted, functions of the substrate are divided between a heat dissipating substrate and a wiring substrate. The heat dissipating substrate has a relatively high thermal conductivity, and includes principal surfaces defined by electric insulators, one of which is provided with an outer conductor located thereon. The wiring substrate is mounted on the upper principal surface of the heat dissipating substrate, has a thermal conductivity lower than that of the heat dissipating substrate, and includes a wiring conductor made mainly of silver or copper and located inside the wiring substrate, the wiring conductor being electrically connected to the outer conductor. The semiconductor element is mounted on the upper principal surface of the heat dissipating substrate and disposed in a through hole of the wiring substrate.

Semiconductor device

In a metal base substrate with a low-temperature sintering ceramic layer located on a copper substrate, bonding reliability is increased between the copper substrate and the low-temperature sintering ceramic layer. A raw laminated body is prepared by stacking, on a surface of a copper substrate, a low-temperature sintering ceramic green layer including a low-temperature sintering ceramic material containing about 10 mol % to about 40 mol % of barium in terms of BaO and about 40 mol % to about 80 mol % of silicon in terms of SiO, and this raw laminated body is subjected to firing at a temperature at which the low-temperature sintering ceramic green layer is sintered. In the thus obtained metal base substrate, a glass layer composed of Cu&#x2014;Ba&#x2014;Si based glass with a thickness of about 1 &#x3bc;m to about 5 &#x3bc;m is formed between the metal substrate and the low-temperature sintering ceramic layer.

Metal base substrate and manufacturing method thereof

A glass ceramic composition includes a SrZrOceramic, a LiO&#x2014;MgO&#x2014;ZnO&#x2014;BO&#x2014;SiO-based glass, Mg2SiO4 in an amount of about 5 to 40 weight percent, and a SrTiOceramic in an amount in the range of about 0 to about 6 weight percent of the total. The LiO&#x2014;MgO&#x2014;ZnO&#x2014;BO&#x2014;SiO-based glass accounts for about 1 to about 12 weight percent of the total.

Growing community of inventors

Kyoto, Japan

Yasutaka Sugimoto