Mitsubishi Electric Corporation

Sanyo Electric Co., Ltd.

Ricoh Company, Ltd.

Other

Yasutaka Shimizu

Kenichi Shibata

Yasumi Kobayashi

Yasuhiro Hirao

Kuniyuki Matsui

Kosuke Takeuchi

Masaki Watanabe

Yoshitaka Otsubo

Ryo Goto

Hiroya Abe

Yusuke Takahashi

Tateo Kondo

Takuya Takahashi

Kazuya Okada

Koichi Masuda

Manabu Matsumoto

Masami Ikeda

Kohji Yoshii

Mituharu Tabata

Toshiharu Tanaka

Takami Otsuki

Yuji Miyazaki

Hiroki Muraoka

Shingo Tomioka

Shigetaka Tonami

Atsuhiro Nishikata

Shoji Izumi

Hidetaka Matsuo

A semiconductor device includes: a first circuit pattern having a recessed part in a planar view; a second circuit pattern positioned in the recessed part; a plurality of semiconductor chips bonded onto the first circuit pattern; and wires connecting top electrodes of the plurality of semiconductor chips to the second circuit pattern, wherein a width of the second circuit pattern increases from upstream to downstream on a current path by which a current flows through the second circuit pattern, and the first circuit pattern has a step in a planar view on a side of the recessed part, and a width of the recessed part increases in a tiered way to match an increase in the width of the second circuit pattern.

Semiconductor device

According to an aspect of the present disclosure, a semiconductor device includes a substrate, a resin case surrounding a region just above the substrate in a planar view, a semiconductor chip provided in the region and an electrode including a first portion pulled out from an upper surface of the resin case and a second portion provided below the upper surface of the resin case and to be inserted into the resin case, and being electrically connected to the semiconductor chip, wherein a first notch is formed over the first portion to the second portion in the electrode, and a first groove is formed to expose a portion, formed in the second portion, in the first notch on the upper surface of the resin case.

Semiconductor device and method of manufacturing semiconductor device

An object is to provide a semiconductor device capable of reducing inductance between a high potential terminal and a low potential terminal while achieving downsizing of the semiconductor device. A semiconductor device includes: the insulating substrate; the circuit pattern including a low potential circuit pattern and a high potential circuit pattern provided on a region adjacent to the low potential circuit pattern; a plurality of semiconductor chips mounted on the circuit pattern; a low potential terminal having one end portion connected to the low potential circuit pattern; and a high potential terminal having one end portion connected to the high potential circuit pattern, wherein the high potential terminal and the low potential terminal include electrode parts and constituting parallel flat plates vertically disposed in parallel to each other and extending on a side of the low potential circuit pattern and electrode parts and protruding from the insulating substrate.

A semiconductor module includes a semiconductor element, a substrate on which the semiconductor module is mounted, a heat radiating plate on which the substrate is mounted, a resin case, and a first main current electrode and a second main current electrode, in which in the first main current electrode and the second main current electrode, one end of each thereof is joined to a circuit pattern on the substrate, an other end of each thereof is extended through and incorporated in a side wall of the resin case so as to project outward of the resin case, and each thereof has at least a portion of overlap at which a part thereof overlaps in parallel with each other with a gap therebetween, and each thereof has a slope portion provided between an external projection portion and an internal projection portion.

Semiconductor module

A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.

Semiconductor device and manufacturing method for semiconductor device

An object of the present disclosure is to provide a semiconductor device capable of confirming withstand voltage of a snubber circuit after providing the snubber circuit and a method of manufacturing the semiconductor device. A semiconductor device according to the present disclosure includes: an insulating substrate; a circuit patterns provided on the insulating substrate; a snubber circuit substrate provided on the insulating substrate separately from the circuit patterns; a resistance provided on one of the circuit patterns and the snubber circuit substrate; a capacitor provided on another one of the circuit patterns and the snubber circuit substrate; and at least one semiconductor element electrically connected to the resistance and the capacitor.

An object is to provide a technology for enabling reduction in the time and cost taken to manufacture a die to be used for molding a case that surrounds semiconductor elements. A semiconductor device includes a base plate, a cooling plate, an insulating substrate, a semiconductor element, a case, a lead frame formed integrally with the case and including a terminal formed on one end portion of the lead frame and protruding outward, and a sealant. The case includes a pair of first case components arranged to face each other, and a pair of second case components arranged to face each other and crossing the pair of first case components. Joining end portions of the first case components to end portions of the pair of second case components forms the case.

Case with a plurality of pair case components for a semiconductor device

The object is to provide a technology for enabling detection of the voltage resistance in an assembled snubber substrate. A semiconductor device includes: a snubber substrate fixed to a base while being spaced from a p electrode and an n electrode; a snubber circuit disposed on the snubber substrate and electrically connected to the p electrode and the n electrode; and a semiconductor element electrically connected to the snubber circuit. The base includes an insulating component insulating the p electrode, the n electrode, and the snubber substrate from one another.

Semiconductor device and method for manufacturing the same

Provided is a technique for improving product attachment. In a semiconductor device, the following expression is satisfied by an angle A formed by an imaginary line connecting two attachment holes together and an imaginary line connecting together a lowest point of one of two projections positioned in a surrounding portion of one of the two attachment holes and a contact point between a bulge and a heat sink, with a screw fastened to the heat sink through the one attachment hole, where M represents a vertical direction between the lower end of a body and the lower end of a case, where W represents a bulge amount of the bulge, where T represents a height of the projection, where L represents a horizontal distance from the outer peripheral end of the case to the outer peripheral end of the heat dissipation plate: 0&#x3c;A&#x3c;arctan((M+W&#x2212;T)/L).

Provided is a technique of reducing detachment of a sealing resin in a semiconductor device, thereby achieving an increased improvement in lifetime of the semiconductor device. The semiconductor device includes the following: an insulating substrate; a metal block disposed on the upper surface of the insulating substrate; a semiconductor element mounted on the upper surface of the metal block; a case enclosing the semiconductor element, the metal block, and the insulating substrate; and a sealing resin sealing the semiconductor element and the metal block. The metal block includes at least one groove on a surface of the metal block, the surface being in contact with the sealing resin. The opening of the at least one groove has a width narrower than a width of the bottom surface of the at least one groove.

A power module includes a power semiconductor device, and a chip component arranged on first and second circuit patterns that are electrically connected to the power semiconductor device, and arranged so as to bridge the first and second circuit patterns. The chip component is arranged so that first and second electrodes are respectively positioned on the first and second circuit patterns, and the first and second electrodes and the first and second circuit patterns are respectively joined with solder layers. Between a lower surface of the chip component and the first circuit pattern and between the lower surface of the chip component and the second circuit pattern, two spacers are provided in parallel with each other respectively at positions close to the first and second electrodes. The solder layers do not exist on an inner side of the two spacers in parallel with each other.

Power module

According to the present invention, a semiconductor device includes a heat spreader, a semiconductor chip fixed to a mounting surface of the heat spreader via a bonding member and sealing resin that covers the heat spreader and the semiconductor chip, wherein a groove is formed on the mounting surface around the semiconductor chip, a length between the semiconductor chip and the groove is equal to or greater than a depth of the groove, and the bonding member is not provided on at least part of a region of the mounting surface between the semiconductor chip and the groove.

A semiconductor device includes: a circuit pattern, at least one or more wires joined thereto, an electrode terminal joining thereto, and a semiconductor element. The electrode terminal includes a horizontally extending portion extending along a main surface and connected to the wire, and a bent portion at which an extending direction of the electrode terminal is changed relative to the horizontally extending portion. Each of the wires has joint portions at which each of the wires and the circuit pattern are joined to each other. In a plan view, the joint portions are located on an outside of a portion where each of the wires and the electrode terminal overlap each other.

A toner carrier includes a metal core, a barrel formed on an outer circumference of the metal core and including at least an elastic layer, and a coating formed on outer circumferences of both ends of the barrel. The coating has a thickness and a width of an outer circumference of the coating is different from a width of an inner circumference of the coating. The width is from an end surface of the barrel along an axis of the barrel, and the width of the outer circumference is larger than the width of the inner circumference so that the end surface of the coating is reversely inclined.

Growing community of inventors

Tokyo, Japan

Yasutaka Shimizu