Hitachi, Ltd.

Ykk Corporation

Hitachi Global Storage Technologies Japan, Ltd.

Kabushiki Kaisha Toshiba

Ykk Corporation of America

Hitachi Global Storage Technologies Netherlands B.v.

Toshiba Energy Systems & Solutions Corporation

Hgst Netherlands, B.v.

Toshiba Infrastructure Systems & Solutions Corporation

Hitachi Global Storage Technologies

Kabuhsiki Kaisha Toshiba

Kabusaires Kaisha Toshiba

Yasutaka Nishida

Hideki Sawaguchi

Hisashi Takano

Takehiko Hamaguchi

Masafumi Mochizuki

Ryoichiro Uehara

Futoshi Tomiyama

Ikuya Tagawa

Atsushi Nakamura

Mutsuki Yamazaki

Kazushige Yamamoto

Hiroshi Ide

Soichiro Shibasaki

Naoyuki Nakagawa

Hiroyuki Tsuchinaga

Yukitami Mizuno

Yuya Honishi

John J Valdes

Naoki Satoh

Shinya Sakurada

Seiichi Mita

Masato Shiimoto

Yohji Maruyama

Fumihiko Aiga

Takeshi Harada

Tomohiro Okada

Yoshiju Watanabe

Kenichi Yoshie

Hiroyuki Katada

Toru Matsushita

Takashi Yoshida

Tatsuo Shimizu

Tadashi Sakai

Hitoshi Kaneko

Yuichi Yamazaki

Naoshi Sakuma

Masayuki Katagiri

Toshiya Yonehara

Keiko Okamoto

Hideaki Maeda

Hisao Miyazaki

Masaki Endo

Satoshi Itoh

Tomoko Yagami

Hisashi Saito

Michihiko Inaba

Atsushi Wada

Fumiko Akagi

Kayo Fujimoto

Yasuaki Funo

Miki Hara

Masafumi Michizuki

Syuji Nishida

Toshihiko Shimizu

Masakazu Yamagiwa

Akiko Hirao

Yoshiaki Kawato

Daimotsu Kato

Yosuke Kajiwara

Reiko Yoshimura

Tsukasa Tada

Hiroshi Matoba

Junguo Xu

Ryukichi Murai

Kiichiro Ishikawa

Takeshi Nakagawa

Sara Yoshio

Ryoji Kawamura

Yoshiko Hiraoka

Shinichiro Kinebuchi

Kazuhisa Shishida

Shuji Nishida

Hisanori Kato

Kanta Sugimoto

Yuki Tsukuda

Yuko Kinoshita

Yasuo Wakaki

Hiroki Fukushima

Taro Asakura

Westly D Hetrick

Toshihiko Iwasaki

Satoshi Tabata

Roger Wood

A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer on the p-electrode, and an n-type layer between the p-type light-absorbing layer and the n-electrode. A first region is included in the p-type light-absorbing layer from a surface on the n-type layer side toward the p-electrode. The first region includes n-type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p-type light-absorbing layer [nm]. A concentration of the n-type dopant of the first region is 1.0×10[cm] or more and 1.0×10[cm] or less. The concentration of the n-type dopant of the first region and a concentration of hole of the first region satisfy 10≤ the concentration of the n-type dopant/the concentration of hole ≤5.0×10.

Solar cell, multi-junction solar cell solar cell module, and photovoltaic power generation system

According to one embodiment, a data processing device includes an acquisition part, and a processor. The acquisition part is configured to acquire first data including time-series image data. The processor is configured to derive first feature information based on a multidimensional array of n dimensions based on the first data acquired by the acquisition part. n is an integer not less than 3. A first axis of the multidimensional array is related to time.

Data processing device, data processing method, and data processing program for evaluation an object based on a persistence diagram from time-series image data

According to one embodiment, a solar cell includes first and second conductive layers, first and second counter conductive layers, first and second photoelectric conversion layers, first and second compound layers. The first counter conductive layer includes a first conductive region. A direction from the first conductive layer to the first conductive region is along a first direction. The first compound layer includes a first compound region provided between the first photoelectric conversion layer and the first conductive region. A second direction from the first conductive layer to the second conductive layer crosses the first direction. The second counter conductive layer includes a second conductive region electrically connected with the first conductive layer. A direction from the second conductive layer to the second conductive region is along the first direction. A direction from the first conductive region to the second conductive region is along the second direction.

Solar cell, multi-junction type solar cell, solar cell module, and solar cell power generation system

A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80≤a1≤2.20, 0.005≤b1≤0.05, 0≤c1≤0.20, and 0.60≤d1≤1.00.

Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by GaZnSnM1O, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.00 or less, and which is located on the n-electrode side, and a second n-type layer which is a layer that mainly contains a compound represented by GaM2M3M4O, the M2 being Al or/and B, the M3 is one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M4 being one or more selected from the group consisting of Sn, Si, and Ge, the w1 and the w5 being numerical values of more than 0, the w2, the w3, and the w4 being numerical values of 0.00 or more, and the w5 when a sum of the w1, the w2, the w3, and the w4 is 2 being 3.00 or more and 3.80 or less, and which is located on the p-type light-absorbing layer side.

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by GaM1M2M3M4O, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

A magnet material of an embodiment includes a composition represented by a formula 1: (FeCoT)(BA), and a metallic structure having a CuAlcrystal phase as a main phase. T is at least one element selected from V, Cr, and Mn. A is at least one element selected from C, N, Si, S, P, and Al. An atomic ratio x of Co and an atomic ratio y of the element T satisfy 0.01&#x2264;y&#x2264;0.5 and x+y&#x2264;0.5. When the element T includes at least one element selected from V and Cr, a total atomic ratio of V and Cr is 0.03 or more. When the element T includes Mn, an atomic ratio of Mn is 0.3 or less. An atomic ratio a of the element A satisfies 0&#x2264;a&#x2264;0.4. A total atomic ratio b of B and the element A satisfies 0.8&#x2264;b&#x2264;1.2.

Magnet material, permanent magnet, motor, and power generator

A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

Method for manufacturing graphene wiring structure and method for manufacturing wiring structure

A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600&#xb0; C. or more and 1100&#xb0; C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Method for manufacturing semiconductor device

Graphene wiring structure and semiconductor device using the same

According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is &#xbd; of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5&#xd7;10atoms/cmor less.

Semiconductor device and electrical device

A hard-disk drive having a structurally efficient magnetic head slider utilizes a MAMR-based spin torque oscillator (STO) for head-disk contact detection and for flying height sensing. Contact detection and spacing estimation techniques consider the nominal temperature difference, and thus different criteria, between read and write operations.

Hard disk drive with contact detection using a spin torque oscillator

A magnetic disk drive system configured for shingled magnetic data recording wherein data tracks are recorded in an overlapping fashion on a magnetic media. The disk drive system includes magnetic write heads that are asymmetric so as to have increased writing at one side of the write head. The magnetic disk drive system includes magnetic write heads that are mirror images of one another so that write heads located at opposite surfaces of the magnetic media (e.g. one head facing up and one facing down) end up having preferential writing in the location relative to inner and outer diameters of the magnetic media.

Magnetic data recording system with mirror image asymmetric magnetic write elements

A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.

Solar cell

Growing community of inventors

Kodaira, Japan

Yasutaka Nishida