Jsr Corporation

Yasutaka Kamei

Takahiro Hayama

Tomotaka Shinoda

Naoki Nishiguchi

Satoshi Kamo

Tatsuya Yamanaka

Norihiko Sugie

Masahiro Noda

Kiyotaka Mitsumoto

Megumi Arakawa

Pengyu Wang

Yuki Kushida

Yuuya Yamada

Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

Composition for chemical-mechanical polishing and chemical-mechanical polishing method

A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3&#xd7;10to 1.5&#xd7;10per mL.

Semiconductor treatment composition and treatment method

A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content M(ppm) and a sodium content M(ppm) that satisfy M/M=1&#xd7;10to 1&#xd7;10.

A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

Cleaning composition and cleaning method

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Yasutaka Kamei