Micron Technology Incorporated

Yasutaka Iuchi

Kenichi Kusumoto

Mitsunari Sukekawa

Akie Shimamura

Shogo Omiya

Yoshinori Ikebuchi

Kenichi Sugino

Keisuke Shimada

Apparatuses and methods for manufacturing semiconductor memory devices are described. An example method includes: forming a conductive layer and sputtering the conductive layer with gas. The conductive layer includes a first portion having a top surface having a first height; and a second portion having a top surface having a second height lower than the first height. Sputtering the conductive layer with gas may be performed to remove the first portion of the conductive layer and increase the second height of the second portion of the conductive layer concurrently.

Conductive layers in memory array region and methods for forming the same

A method for forming a multilayer conductive structure includes forming a first conductive portion; forming a second conductive portion containing ruthenium (Ru) therein on the first conductive portion; forming a third conductive portion on the second conductive portion; and performing a silicidation process on the second conductive portion.

Semiconductor device and method of forming the same

A method of forming a conductive line construction comprises forming a structure comprising polysilicon-comprising material. Elemental titanium is directly against the polysilicon of the polysilicon-comprising material. Silicon nitride is directly against the elemental titanium. Elemental tungsten is directly against the silicon nitride. The structure is annealed to form a conductive line construction comprising the polysilicon-comprising material, titanium silicide directly against the polysilicon-comprising material, elemental tungsten, TiSiNbetween the elemental tungsten and the titanium silicide, and one of (a) or (b), with (a) being the TiSiNis directly against the titanium silicide, and (b) being titanium nitride is between the TiSiNand the titanium silicide, with the TiSiNbeing directly against the titanium nitride and the titanium nitride being directly against the titanium silicide. Structure independent of method is disclosed.

Conductive line construction, memory circuitry, and method of forming a conductive line construction

A method of forming a semiconductor device includes forming a tungsten layer over a semiconductor substrate in a first chamber, transferring the substrate over which the tungsten layer is formed from the first chamber to a second chamber without exposing into an atmosphere including oxygen, and forming a silicon nitride layer on the tungsten layer in the second chamber.

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Higashihiroshima, Japan

Yasutaka Iuchi