Seiko Epson Corporation

Yasutaka Imai

Tetsuji Fujita

Koichiro Akasaka

Hideki Hahiro

Michifumi Nagawa

Takafumi Noda

Tsuyoshi Kaneko

Masamitsu Mochizuki

Atsushi Sato

Atsushi Ito

A light emitting apparatus according to the present disclosure includes a first layer made of a semiconductor monocrystal, a second layer provided at the first layer and having a crystal orientation not continuous with the crystal orientation of the first layer, and a columnar crystal structure including a light emitting layer and extending from the second layer.

Light emitting apparatus, method for manufacturing light emitting apparatus, and projector

A method of manufacturing a light source device includes the steps of providing a mask layer to a substrate, providing the mask layer with a plurality of first openings and at least one second opening, and growing columnar parts having a light emitting section from the plurality of first openings, and growing a structure from the second opening.

Method of manufacturing light emitting device, light emitting device, and projector

A light emitter including a base, a light source that outputs light, and a phosphor that is provided in a form of a film at a first surface of the base and emits light when irradiated with the light outputted from the light source. A second surface of the phosphor that is a surface opposite the base has an irregular shape, and the light source radiates the light obliquely with respect to the irregular shape.

Light emitter and projector

A light emitting device includes a substrate, and a laminated structure provided on the substrate, wherein the laminated structure has a plurality of columnar portions, the columnar portion contains a material having a wurtzite-type crystal structure, in a plan view as seen from a layered direction of the laminated structure, the plurality of columnar portions are arranged in a square lattice form or rectangular lattice form, a line passing through centers of the adjacent columnar portions is inclined relative to m-planes of the columnar portions located between the centers of the adjacent columnar portions, and vertices of the adjacent columnar portions are not placed on the line.

Light emitting device, method of manufacturing light emitting device, and projector

A light emitting apparatus including a base, a light source, and a plurality of columnar sections that are provided at the base and each include a first phosphor that emits light when irradiated with light emitted from the light source, in which the light source radiates the light to the columnar sections obliquely with respect thereto.

Light emitting apparatus and projector

An atomic oscillator includes a gas cell housing alkali metal atoms, a light source providing light to the gas cell, and a light detector that detects an amount of light transmitted through the gas cell. The light source includes a substrate, a first mirror layer on an upper portion of the substrate, an active layer on an upper portion of the first mirror layer, a second mirror layer on an upper portion of the active layer, a first contact layer on an upper portion of the second mirror layer, a light absorption layer on an upper portion of the first contact layer, and a second contact layer on an upper portion of the light absorption layer. As such, an output wavelength and the light output of the light source can be independently adjusted.

Atomic oscillator

A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated by the active layer, and an angle formed by a side surface of the first distortion imparting portion and an upper surface of the substrate, and an angle formed by a side surface of the second distortion imparting portion and the upper surface of the substrate are greater than an angle formed by a side surface of the resonance portion and the upper surface of the substrate.

Vertical cavity surface emitting laser and atomic oscillator

A light emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer.

Light receiving and emitting device

A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and a reflected light, and the reflected light is received by the light receiving unit.

A light emission device includes: first and second clad layers sandwiching an active layer; a first electrode connected with the first clad layer; and second electrodes connected with the second clad layer, at least part of the active layer forms gain areas corresponding to the second electrodes, the gain areas extend from a first side to a second side of the active layer while inclined to a vertical of the first side, at least first and second gain areas form a set of gain areas and a plurality of sets are provided, the first and second gain areas in each set are disposed perpendicular to a direction extending from the first side to the second side, the second electrodes above the first gain areas are interconnected by a first common electrode, and the second electrodes above the second gain areas are interconnected by a second common electrode.

Light emission device, light emission device driving method, and projector

A method for manufacturing an optical device, the method includes the steps of: forming a multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a reflection coefficient examination on the multilayer film; patterning the multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer; and removing at least a portion of the sacrificial layer to expose at least a portion of an upper surface of the semiconductor layer, wherein an optical film thickness of the semiconductor layer is formed to be an odd multiple or an even multiple of &#x3bb;/4, where &#x3bb; is a design wavelength of light emitted by the surface-emitting laser section, and an optical film thickness of the sacrificial layer is formed not to be an odd multiple or an even multiple of &#x3bb;/4.

Optical device and its manufacturing method, and optical device wafer

An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

Optical semiconductor element including photodetecting element with comb-tooth structure

A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflection coefficient examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer, wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of &#x3bb;/4, where &#x3bb; is a design wavelength of light emitted by the surface-emitting laser section.

Method for manufacturing optical device, and optical device wafer

An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; and an electrostatic breakdown protection element that is provided on an optical path of the laser light emitted from the surface-emitting type semiconductor laser, absorbs a portion of the laser light, and protects the surface-emitting type semiconductor laser from electrostatic destruction.

Growing community of inventors

Suwa, Japan

Yasutaka Imai