Hoya Corporation

Yasutaka Horigome

Hitoshi Maeda

Ryo Ohkubo

Osamu Nozawa

Hiroaki Shishido

A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Mask blank, phase shift mask, and method for manufacturing semiconductor device

Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n, n, and nof the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n&#x3c;nand n&#x3e;n; and extinction coefficients k, k, and kof the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k&#x3e;k&#x3e;k.

Mask blank, phase shift mask, and method of manufacturing semiconductor device

A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom % or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom %, and has a thickness that is not less than twice the thickness of the high nitride layer.

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Tokyo, Japan

Yasutaka Horigome