Panasonic Corporation

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Matsushita Electric Industrial Co., Ltd.

Tohoku University

Jgc Corporation

Yasushi Yamada

Shinji Inoue

Takuji Maeda

Makoto Fujiwara

Takayuki Ito

Yusuke Nemoto

Junichi Yasui

Hiroshi Osada

Tadafumi Yoshida

Yuji Yagi

Norifumi Furuta

Gentaro Yamanaka

Hideo Hasegawa

Naoki Katayama

Hiroyuki Mori

Hideaki Takahashi

Kiyohito Ishida

Kazuyuki Nakanishi

Hideo Tachikawa

Takashi Kojima

Haruyoshi Kondo

Hiroyuki Ueda

Tadashi Oshima

Makoto Imai

Hiromichi Kuno

Yutaka Yokoi

Ikuo Ohnuma

Akio Kitami

Masayuki Matsui

Masayasu Ishiko

Takashi Atsumi

Yukio Miyachi

Kazunori Katoh

Shingo Arai

Naoto Kikuchi

Yoshikazu Takaku

Mitsuru Kida

Ikuo Nakagawa

Takashi Ueno

Mikio Shirai

Hiroyuki Kosasayama

Naoki Ogawa

Kunio Fukuda

Tatsuo Kamisuki

A secure LSI deviceincludes an encryption sectionfor encrypting a program, and an external I/Ffor inputting/outputting a program or data from/to an external memory. In the encryption section, the operation of a private key arithmetic processing sectionis prohibited with respect to a sequence whose execution is determined by a key-generation/update sequencerto be impermissible. In the external I/F, a program processing sectionand a data processing sectionare structured independently from each other.

Semiconductor device including encryption section, semiconductor device including external interface, and content reproduction method

A sulfur recovery unit comprising: a reaction furnace configured to carry out a high-temperature Claus reaction between hydrogen-sulfide-containing gas and oxygen-containing gas introduced to the reaction furnace; a sulfur condenser configured to cool reaction gas discharged from the reaction furnace and condense sulfur contained in the reaction gas; and a pipe that connects the reaction furnace to the sulfur condenser, wherein the reaction furnace is fixed to the ground; and the sulfur condenser and the pipe are arranged so as to be able to move relative to the reaction furnace.

Sulfur recovery unit and sulfur recovery method

A power module includes a semiconductor device having a first and second arms, and gate driving circuit board. The first arm includes a first extending electrode, a first gate electrode of a first power device extending in a direction different from the first extending electrode, and a first output electrode extending in the different direction from the first gate electrode. The second arm stacked on the first arm includes a second extending electrode extending in the first extending electrode extending direction in an insulating state, a second gate electrode of a second power device, extending in the first gate electrode extending direction, and a second output electrode extending in the first output electrode extending direction with electrical connection thereto. The gate driving circuit board is disposed at the first and second gate electrodes extending side so as to face the semiconductor device.

Power module

A junction body has a first member and a second member each of which is provided with a joining surface whose main component is copper. A solder member containing, in a tin-base solder material, a three-dimensional web structure whose main component is copper is provided between the first member and the second member. A copper-tin alloy whose average thickness is 2 &#x3bc;m or more but 20 &#x3bc;m or less is provided between the joining surfaces and the three-dimensional web structure.

Junction body, semiconductor module, and manufacturing method for junction body

A power module includes a pair of power devices that are stacked with a plate-shaped output electrode arranged therebetween, and an N-electrode and a P-electrode that are stacked with the pair of power devices arranged therebetween. The output electrode is anisotropic such that the thermal conductivity in a direction orthogonal to the stacking direction is greater than the thermal conductivity in the stacking direction. Also, the output electrode extends in the orthogonal direction from a stacked area where the pair of power devices are stacked. The N-electrode and the P-electrode extend in the orthogonal direction while maintaining an opposing positional relationship.

A zinc based solder materialof the present invention is prepared by providing on the surface of a zinc based material, from which an oxide filmhas been removed or at which an oxide filmdoes not exist, with a coating layercontaining primarily a metal whose oxide is more easily reducible than the oxide film. In a joined body and a power semiconductor module of the present invention, the zinc based solder materialis used in the joining portion, and after joining, the coating layerdoes not exist.

Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same

A semiconductor element cooling structure includes a plurality of semiconductor elements, and electrode structure, which has cooling medium channels therein and is electrically connected to the plurality of semiconductor elements. The electrode structure includes an alternating current electrode having the semiconductor elements on each of opposite surfaces, and a plurality of direct current electrodes holding therebetween the alternating current electrode and the semiconductor elements respectively mounted on the opposite surfaces of the alternating current electrode. Each of the alternating current electrode and the direct current electrodes has the cooling medium channels therein.

Semiconductor element cooling structure

An development environment of a high security level is provided for a key-installed system. Development of a program for a system having an LSI device which includes a secure memory is performed by providing another LSI device having the same structure and setting the provided LSI device to a development mode which is different from a product operation mode. Alternatively, the provided LSI device is set to an administrator mode to perform development and encryption of a key-generation program. The LSI device is set to a key-generation mode to execute the encrypted key-generation program, thereby generating various keys.

Program development method, program development supporting system, and program installation method

A system including a secure LSIestablishes a communication path to/from a server(UD), and receives a common key-encrypted program generated by encryption with a common key and transmitted from the server(UDand UD). The received common key-encrypted program is decrypted to generate a raw program, and the raw program is re-encrypted with an inherent key to newly generate an inherent key-encrypted program, which is stored in an external memory.

Program update method and server

Growing community of inventors

Aichi, Japan

Yasushi Yamada