Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Showa Denko K.k.

Denso Corpora Tion

Yasushi Urakami

Yusuke Yamashita

Itaru Gunjishima

Sachiko Aoi

Jun Saito

Ayumu Adachi

Shoichi Yamauchi

Hitoshi Yamaguchi

Yukihiko Watanabe

Katsuhiro Kutsuki

Masakazu Kobayashi

Hidefumi Takaya

Tatsuji Nagaoka

Toru Onishi

Toshio Sakakibara

Jun Sakakibara

Nobuhiro Tsuji

Keisuke Shigetoh

Narumasa Soejima

Toshiyuki Morishita

Takumi Shibata

Hiroki Miyake

Masanori Yamada

Tomohiro Shonai

Takehiro Kato

Hiromichi Kinpara

Keita Kataoka

Kunihiro Onoda

Yuki Murakami

Yoshinori Otsuka

Yoshifumi Yasuda

Yuto Kurokawa

Akihiro Matsuse

Masakazu Okada

Masatoshi Tsujimura

Yuuki Furuya

Yusuke Kanzawa

A switching element includes a semiconductor substrate having: an n-type drift region in contact with each of gate insulating films on a bottom surface and side surfaces of each of the trenches; a p-type body region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the n-type drift region; an n-type source region in contact with the gate insulating films on the side surfaces of each of the trenches at a position above the p-type body region, the n-type source region being separated away from the n-type drift region by the p-type body region; plurality of p-type bottom regions each of which is located under a corresponding one of the trenches and located away from a corresponding one of the gate insulating films; and a p-type connection region that connects the p-type bottom regions and the p-type body region.

Switching element

A semiconductor device includes a cell section having a plurality of gate structures, and an outer peripheral section surrounding the cell section. The cell section includes a semiconductor substrate, the plurality of gate structures, a first electrode and a second electrode. The cell section and the outer peripheral section includes a protective film made of a material having a thermal conductivity lower than that of the first electrode. The protective film extends from the outer peripheral section to an outer edge portion of the cell section adjacent to the outer peripheral section and covers a portion of the first electrode adjacent to the outer peripheral section.

Semiconductor device having cell section with gate structures partly covered with protective film

A semiconductor device includes a semiconductor substrate comprising an upper surface and a lower surface, an upper electrode provided on the upper surface, and a lower electrode provided on the lower surface. The semiconductor substrate includes, in a planar view, a first section including a center of the semiconductor substrate and a second section located between the first section and a peripheral edge of the semiconductor substrate. The first and second sections each comprise a MOSFET structure including a body diode. The MOSFET structure in the first section and the MOSFET structure in the second section are different from each other such that a forward voltage drop of the body diode in the first section with respect to a current density is higher than a forward voltage drop of the body diode in the second section with respect to the current density.

Semiconductor device

A semiconductor device may include a semiconductor substrate, an insulator film covering a part of an upper surface of the substrate, and a gate electrode opposing the upper surface via the insulator film. In the semiconductor substrate, a drift layer extending through a body layer to the upper surface opposes the gate electrode via the insulator film. The insulator film extends from the upper surface of the semiconductor substrate to an upper surface of the gate electrode by passing between the gate electrode and an upper electrode, and defines an opening at the upper surface of the gate electrode. A side surface of the opening of the insulator film is entirely located outside a volume space consisting of all straight lines that passes through the opposing surface of the drift layer at angle of 45 degrees to the opposing surface.

Field-effect transistor with a heat absorber in contact with a surface of the gate electrode on its back side

A semiconductor device includes a semiconductor substrate, which includes an element region and an outer-periphery voltage withstanding region. The outer-periphery voltage withstanding region includes a plurality of p-type guard rings surrounding the element region in a multiple manner. Each of the guard rings includes a high concentration region and a low concentration region. A low concentration region of an outermost guard ring includes a first part positioned on an outer peripheral side of its high concentration region. Respective low concentration regions of the guard rings include respective second parts, each positioned in a range sandwiched between corresponding two adjacent high concentration regions among a plurality of concentration regions. A width of the first part on a front surface is wider than widths of the second parts on the front surface.

Semiconductor device and production method thereof

In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor apparatus has a semiconductor substrate, a first trench provided in a front surface of the semiconductor substrate, an anode electrode provided inside the first trench, and a cathode electrode provided on a back surface of the semiconductor substrate. The semiconductor substrate has a first p-type region, a second p-type region, and a main n-type region which is in contact with the first p-type region and the second p-type region, and is in Schottky contact with the anode electrode in the side surface of the first trench. The semiconductor substrate satisfies the relationship that an area of the first trench, when the front surface is viewed in a plan view, is smaller than an area of a Schottky interface where the main n-type region is in contact with the anode electrode in the side surface of the first trench.

Semiconductor apparatus

In an end portion of a trench, an opening where the end portion of the trench is exposed is formed in a lead-out electrode, a side surface of the trench gate electrode on a top surface side of a semiconductor substrate is spaced from a trench side surface, and a range adjacent to a boundary line positioned between a top surface of the semiconductor substrate and the trench side surface is covered with a laminated insulating film configured such that an interlayer insulating film is laminated on a gate insulating film. This makes it possible to prevent dielectric breakdown of an insulating film.

An n-type drift region, a p-type first body region and a p-type contact region are formed on an SiC substrate by epitaxial growth. An opening is formed within the contact region by etching such that the first body region is exposed through the opening, and a p-type second body region is formed on the first body region exposed through the opening by epitaxial growth. An n-type source region is formed by epitaxial growth, and an opening is formed within a part of the source region located on the contact region by etching such that the contact region is exposed through the opening. A trench is formed by etching such that the trench extends from the source region to the drift region through the opening of the contact region, and a gate insulating film and a gate electrode are formed within the trench.

SiC-MOSFET and method of manufacturing the same

A semiconductor device may be provided with a semiconductor substrate, an upper electrode, a lower electrode and a gate electrode provided within a trench via a gate insulator film. The semiconductor substrate may include a p-type body layer being in contact with the upper electrode, an n-type drift layer intervening between the body layer and the lower electrode, a p-type floating region provided along a bottom surface of the trench, and a p-type connection region extending between the body layer and the floating region along a side surface of the trench. The trench may include a first section where the connection region is not provided and a second section where the connection region is provided. An inclination angle of the side surface of the trench in the second section may be greater than an inclination angle of the side surface of the trench in the first section.

A trench gate semiconductor switching element is provided. The semiconductor substrate of this element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench; and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region, and in contact with the gate insulation layer on a lower side of the body region. The bottom region includes a low concentration region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench; and a high concentration region in contact with the gate insulation layer in a second range of the bottom surface adjacent to the first range.

Semiconductor switching element

A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region. The bottom region includes a first bottom region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench and extending from the bottom surface to a first position; and a second bottom region in contact with the gate insulation layer in a second range adjacent to the first range and extending from the bottom surface to a second position lower than the first position.

A switching element may include a semiconductor substrate, first and second trenches, a gate insulating layer, an interlayer insulating layer covering the semiconductor substrate, and an electrode on the interlayer insulating layer. A wide portion and a narrow portion may be arranged alternately between the first and second trenches. The interlayer insulating layer may include a contact hole in the wide portion. The electrode may be in contact with the semiconductor substrate within the contact hole. The semiconductor substrate may include an upper n-type region in contact with the gate insulating layer in the narrow portion and in contact with the electrode, a p-type body contact region in contact with the electrode, a p-type body region in contact with the gate insulating layer in the narrow portion, and a lower n-type region in contact with the gate insulating layer in the narrow portion.

Switching element and method of manufacturing the same

A method of manufacturing a semiconductor device includes: forming a trench on a surface of a semiconductor substrate; forming an oxide film on side surfaces and a bottom surface of the trench; removing at least a part of the oxide film by dry etching from the bottom surface of the trench; and ion-implanting conductive impurities into the semiconductor substrate through the bottom surface of the trench after the dry etching. The dry etching is reactive ion etching in which etching gas including fluorocarbon based gas having a carbon atom ring structure, oxygen gas, and argon gas is used.

Method of manufacturing semiconductor device

A method of manufacturing a switching element is provided. The method including: preparing a semiconductor substrate which includes an n-type drain region, a p-type body region, and a trench penetrating the body region and reaching the drain region; and forming a lateral surface p-type region extending along a lateral surface of the trench below the body region by heating the semiconductor substrate so as to make a part of the body region flow into the trench. The switching element includes: a gate insulating layer covering an inner surface of the trench; a bottom p-type region in contact with the gate insulating layer at a bottom surface of the trench and connected to the lateral surface p-type region; an n-type source region; and a gate electrode provided in the trench.

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Kariya, Japan

Yasushi Urakami