Sumitomo Electric Industries, Limited

A.l.m.t. Corporation

Yasushi Tsuzuki

Kenjiro Higaki

Sadamu Ishidu

Takashi Ishii

Akira Yamakawa

Tomoyuki Awazu

Teruo Amoh

Daisuke Takagi

Osamu Komura

Shin-ichi Yamagata

Jin-Joo Matsui

Hiroshi Fukuda

Yasushi Itoh

A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 &#x3bc;m and the center-line average roughness Ra of the surface is no more than 0.1 &#x3bc;m. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.

Semiconductor light emitting element mounting member, and semiconductor light emitting device employing it

A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin.

Semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode

A collective substrate () is produced by firing a ceramic green sheet and forming through-holes () in the resulting substrate. The through-holes () each have an interior surface including taper surfaces () which are tapered as having an opening size progressively decreasing from a main surface () and an external connection surface () toward a minimum size hole portion (). The taper surfaces () respectively form obtuse angles &#x3b8;, &#x3b8;with the main surface () and the external connection surface (). A semiconductor element mount (BL) includes an insulative member () cut out of the collective substrate (). An imaging device (PE) includes an imaging element (PE) mounted in a region surrounded by a frame () which is bonded to the main surface () of the insulative member () and closed by a cover (FL). A light emitting diode component (LE) includes a light emitting element (LE) mounted on the main surface () of the insulative member () with the minimum size hole portion () of the through-hole being filled with an electrically conductive material (), the light emitting element being sealed with a fluorescent material and/or a protective resin (FR). A light emitting diode (LE) includes the light emitting diode component (LE) mounted in a package ().

Collective substrate, semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode

Provided is an aluminum nitride sintered body having a larger area and a smaller thickness as compared to the conventional art, wherein the aluminum nitride sintered body has flatness with controlled warpage and/or waviness height. Methods of producing such sintered body, and further a metallized substrate and a heater using such sintered body are also provided. An aluminum nitride substratehas a maximum length of 320 mm or more, a thickness of more than 0 mm and 2 mm or less, a warpage of 0 &#x3bc;m/mm or more and less than 2 &#x3bc;m/mm, and a local waviness height of 0 &#x3bc;m or more and 100 &#x3bc;m or less.

Aluminum nitride sintered compact

The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting memberincludes: a substrateincluding an element mounting surfacemounting a semiconductor light-emitting elementand first and second conductive regionsdisposed on the element mounting surfaceand connected to the semiconductor light-emitting elementa reflective memberincluding a reflective surfacedefining an internal spacefor housing the semiconductor light-emitting elementand containing a metal disposed on the element mounting surfaceand a metal layerdisposed on the reflective surfaceThe reflective surfaceis sloped relative to the element mounting surfaceso that a diameter of the internal spaceis greater away from the element mounting surface

Light emitting element mounting member, and semiconductor device using the same

A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor deviceis equipped with a substrate, having a bottom surfaceand an element mounting surfacewhich is positioned on the opposite side of bottom surface, and a semiconductor element, having a main surfacewhich is mounted onto element mounting surface. With L being the length in the long direction of main surfaceand H being the distance between bottom surfaceand element mounting surface, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surfaceis a cavity, and elementis provided in cavity. A metal layeris provided on the surface of cavity. In addition, when an electrodewhich connects to an external part is provided on main surface, on the cavity side of the part which connects with electrode, main surfaceis provided with a groove. The groove is for preventing outward flow of connection memberof electrode

Semiconductor device

A semiconductor-light-emitting-device-mounting member BL comprises (a) a highly heat-dissipative memberhaving a main surfaceon which connecting-use electrode layersandare provided to form a device-mounting areaand (b) a frame-shaped memberplaced on the main surfaceso as to surround the device-mounting area. The device-mounting areahas an area that is 1.05 to 4 times the area of a semiconductor light-emitting device LE. A light-emitting-diode-constituting member LEmounts a semiconductor light-emitting device LEon the device-mounting areaof the semiconductor-light-emitting-device-mounting member BL and has a fluorescent body and/or a protective resin LR filling the inside space of the frame-shaped member. A light-emitting diode LEmounts the light-emitting-diode-constituting member LEon a package

Semiconductor light-emitting device mounting member, light-emitting diode constituting member using same, and light-emitting diode using same

A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor deviceis equipped with a substrate, having a bottom surfaceand an element mounting surfacewhich is positioned on the opposite side of bottom surface, and a semiconductor element, having a main surfacewhich is mounted onto element mounting surface. With L being the length in the long direction of main surfaceand H being the distance between bottom surfaceand element mounting surface, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surfaceis a cavity, and elementis provided in cavity. A metal layeris provided on the surface of cavity

A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submountcomprises (a) a substrate; and (b) a solder layerformed on the top surfaceof the substrate. The solder layerbefore melting has a surface roughness, Ra, of at most 0.18 &#x3bc;m. It is more desirable that the solder layerbefore melting have a surface roughness, Ra, of at most 0.15 &#x3bc;m, yet more desirably at most 0.10 &#x3bc;m. A semiconductor unitcomprises the submountand a laser diodemounted on the solder layerof the submount

Submount for mounting semiconductor device

The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submountis equipped with a substrateand a solder layerformed on a primary surfaceof the substrate. The density of the solder layeris at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer. The solder layercontains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layerbefore it is melted is formed on the substrateand includes an Ag filmand an Sn filmformed on the Ag film. The submountfurther includes an Au filmformed between the substrateand the solder layer

Submount and semiconductor device

A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.

Process for molding ceramics

A device for producing a ceramic sintered body consisting essentially of a mixing trough for mixing ceramic powder with water to form a slurry, the mixing trough having stirring blades, a separate slurry circulation conduit and a slurry mixing deflocculating unit, said separate slurry circulation conduit connecting said mixing trough and said deflocculating unit, said slurry mixing unit deflocculating said powder which has been flocculated with no grinding of powder by means of causing a high-speed shear flow and a high-speed contraction flow in the slurry, said slurry being repeatedly circulated form said slurry mixing unit to said mixing trough through said separate slurry circulation conduit.

Device for producing ceramic sintered body

A silicon nitride powder with which a highly reliable silicon nitride with high strength and small strength and dimensional variances is obtainable is disclosed. By setting the amount of their surface acidic groups per B.E.T. surface area to not less than 0.2 .mu.eq/m.sup.2, their dispersibility in a mixing solvent is drastically improved. By using them, moldings with high density and homogeneity can be obtained, thereby enabling in turn a highly reliable sintered product of silicon nitride with high strength and small strength and dimensional variances to be easily manufactured. Besides, in the silicon nitride powder, the proportion of the silicon [Si*] belonging to SiO.sub.2, of the surface silicon [Si], which is determined by the X-ray photoelectron spectroscopy (XPS), should be not less than 0.07 in its atomic ratio [Si*/Si] and that to silicon of the surface carbon [C] which is determined by XPS in the same way should be not more than 0.20 in its atomic ratio [C/Si].

Growing community of inventors

Itami, Japan

Yasushi Tsuzuki