Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Honda Motor Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Citizen Watch Company, Ltd.

Elpida Memory, Inc.

Nec Corporation

Citizen Holdings Company, Ltd.

Other

Fujitsu Corporation

Texas Instruments Corporation

Nippon Telegraph and Telephone Corporation

Subaru Corporation

Ps4 Luxco S.a.r.l.

Yasushi Takahashi

Toshinori Hirashima

Munehisa Kishimoto

Toshiyuki Hata

Ryoichi Kajiwara

Masahiro Koizumi

Kazuya Takahashi

Masamichi Ishihara

Hiroshi Sato

Keiichi Ookawa

Shigeru Ishii

Toshiaki Morita

Kazuyuki Miyazawa

Hidetoshi Iwai

Masaya Muranaka

Yoshitaka Takasaki

Hiromi Matsuura

Hiroyuki Uchiyama

Toru Ishikawa

Ryoichi Hori

Hisashi Nakamura

Yoshihisa Koyama

Kazumasa Yanagisawa

Takashi Shinoda

Tetsu Udagawa

Satoshi Oguchi

Hidetomo Aoyagi

Shigetoshi Sakomura

Haruo Ii

Takeshi Kizaki

Yukio Nakano

Hideki Inoue

Toshiyuki Sakuta

Shoji Hashizume

Katsuyuki Nagano

Kazuhiko Kajigaya

Toshio Miyazawa

Katsutaka Kimura

Hiroshi Ikeda

Shunichi Sukegawa

Toshio Sasaki

Akihiko Takase

Mitsuaki Katagiri

Tomoaki Uno

Kazuyoshi Oshima

Tsugio Takahashi

Tsutomu Takahashi

Seiji Narui

Hiroyuki Tanaka

Masahiro Takatori

Minoru Maeda

Hiroyuki Itoh

Eiichi Amada

Koji Arai

Kiichi Yamashita

Yasuhiro Inagami

Yasuhiro Kasama

Masaki Tamura

Hiroya Shimizu

Eiji Miyamoto

Kimiaki Ando

Yoshitaka Takahashi

Sadayuki Okuma

Katsuhiko Funatsu

Fumiyuki Osanai

Kei Fukuyama

Shinji Bessho

Masayuki Hira

Naoya Kobayashi

Yoshitaka Kinoshita

Takao Ono

Keiichi Okawa

Takaaki Kato

Yasushi Sawada

Takuya Nakajo

Makoto Mitsukawa

Toshio Maeda

Akihiro Hori

Masahiro Koya

Katsuyuki Okubo

Hiroshi Kurokawa

Mitsuo Tanaka

Toru Ueguri

Yasushi Hatta

Akira Kuramochi

Osamu Sakai

Nobuo Shigemizu

Masanori Tazunoki

Souichiro Makino

Yasuhiro Fukuyoshi

Kazuo Tsuji

Tsuyoshi Uehara

Yuji Hayashi

Tatsuya Kouketsu

Tomonori Ootsuka

Yoshiaki Takemura

Takashi Tsuchiya

Sekai Yamazaki

Yasuyuki Maeda

Takao Sonobe

A device includes a battery case () that stores a battery (A orB), a lock mechanism () that is capable of fixing and holding the stored battery (A orB) in the battery case (), and an operation member () that is capable of performing switching operation of the lock mechanism () between a battery-fixed state and a non-battery-fixed state. The lock mechanism () includes a movable block () which is supported by the battery case () in a displaceable manner. The movable block () has a battery restriction portion (or) which restricts displacement of the battery (A orB) in a separation direction in a state of being displaced to a battery fixing position, and a holding force receiving portion () which receives a holding force for maintaining the movable block () at the battery fixing position from the operation member () in a state where the operation member () is operated within a predetermined positional range.

Battery storage device of vehicle

A chip mounting portion included in a semiconductor device has a region including a semiconductor chip in plan view. When an average surface roughness of the region is 'Ra', 0.8 &#x3bc;m&#x2264;Ra&#x2264;3.0 &#x3bc;m holds.

Semiconductor device and method for manufacturing the same

A front structure of a saddled vehicle having a meter unit of a less thickness and rendering meter-side and wiring-side couplers hardly visible from the outside is disclosed. The front structure includes a stem shaft rotatably mounted through a head pipe disposed in a front portion of a vehicle body frame and steerably supporting a front wheel, a top bridge coupling the stem shaft with a handle, a meter unit disposed in front of the top bridge and including a meter display on a top face of the meter unit, a meter-side coupler disposed on the meter unit, and a wiring-side coupler disposed on a side of wiring connected to the meter-side coupler, wherein the meter unit includes a coupler support member extending behind the meter display and supporting the meter-side coupler, and the coupler support member is disposed below the top bridge.

Front structure of saddled vehicle

Battery charger

To improve a performance of a semiconductor device, a semiconductor device includes a lead electrically coupled to a semiconductor chip via a wire. An inner portion of the lead, the semiconductor chip, and the wire are sealed by a sealing body (a resin sealing body). The wire is bonded to an upper surface of a wire bonding portion of the inner portion of the lead. A metal film is formed on a lower surface of the inner portion of the lead, which is on an opposite side to the upper surface. No metal film is formed on the upper surface of the wire bonding portion.

Semiconductor device

Storage battery

Watchcase

To provide a lens driving apparatus that drives a lens in its optical axis-direction without inclining it, and a lens driving apparatus that drives a bobbin in the optical axis-direction smoothly without increasing the frictional force between a ball arranged between the bobbin and a cover, and the bobbin and cover while maintaining high driving power. The lens driving apparatus comprises the polygonal cylindrical bobbin that houses the lens, the box-shaped cover that receives the bobbin, a drive unit that moves the bobbin in the optical axis-direction of the lens, and a support unit that supports the bobbin.

Lens driving apparatus

A stereo camera unit includes a camera stay, a pair of lenses fixed to the camera stay, image-capturing devices for receiving light condensed by the lens, and a mount board mounting the image-capturing devices. The mount board is fixed to the camera stay via fastening members such as a screw, whereby the relative position of the lens with respect to the image-capturing device is determined. A metal core substrate having a same metal material as the camera stay in a core layer is employed for the mount board.

Stereo camera unit

Wrist watch

Wrist watch case

To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased.

Semiconductor memory device, information processing system including the same, and controller

Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin. A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.

Semiconductor device and method of manufacturing the same

To enhance the reliability of connection between a semiconductor chip and a metal plate by ensuring sufficiently the thickness of a conductive material interposed between the semiconductor chip and the metal plate. A lead frame is arranged over a jig and a clip frame is arranged over protruding portions provided on the jig. In this state, a heating process (reflow) is performed. In this case, high melting point solders filling first spaces are melted in a state in which the first space is formed between a High-MOS chip and a High-MOS clip and the first space is formed between a Low-MOS chip and a Low-MOS clip. At this time, even when the high melting point solder is melted in the first space, the size (in particular, the height) of the first space does not change and the first space is maintained.

Growing community of inventors

Tokyo, Japan

Yasushi Takahashi