Research Development Corporation of Japan

Mitsubishi Kinzoku Kabushiki Kaisha

Other

Mitsubishi Metal Corporation

Japan Silicon Co., Ltd.

Yasushi Shimanuki

Koichi Sassa

Kenji Tomizawa

Shinichi Komori

Koutaro Shimizu

Yoshiaki Banba

Ichiro Yamashita

Isamu Suzuki

Akira Higuchi

Hisashi Furuya

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.

Method and apparatus for growing silicon crystals

An apparatus for pulling single crystals of dissociative compounds, with a volatile component gas sealed in a growth chamber at a controlled pressure thereof, is disclosed, wherein the chamber is made of one or more materials selected from the group consisting of ceramics, gas-tight carbon, heat-resistant metallic materials, ceramic-coated carbon and ceramic-coated heat-resistant metallic materials, the chamber can be divided, with a structure of the divided portion of the chamber capable of being sealed by making use of a sealing material with a pressure exerted on the seal, and an optical window is disposed in the chamber through which the growing state of the crystal in the chamber can be observed.

Apparatus for growing single crystals of dissociative compounds

The present invention provides a method for growing single crystals of a dissociative compound by pulling with a volatile component gas of the dissociative compound sealed at a controlled pressure in a heated growth chamber in which the single crystals are pulled, wherein a partition pipe having a lower density than the density of melt of the dissociative compound is disposed so as to immerse its lower end in the melt and the melt is covered with B.sub.2 O.sub.3 at either one of the inside or outside of the partition pipe. The method of the present invention enables the precise, appropriate control of the melt composition during the course of growing and thereby provides single crystals free from any detrimental contamination and undesirable dislocation problems. The thus obtained crystals are especially desirable for use as substrates for high speed and/or optical devices, because of their excellent semi-insulating properties.

Method for growing single crystals of dissociative compounds

An improved copper base alloy having excellent thermal resistance and electric conductivity. The alloy consists essentially of from 0.0005 to 0.01 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities. The copper base alloy may further contain from 0.002 to 0.05 percent magnesium whereby the magnesium imparts further enhanced thermal resistance to the alloy.

High thermal resistance, high electric conductivity copper base alloy

Growing community of inventors

Hasuda, Japan

Yasushi Shimanuki