Nissan Chemical Industries Limited

Nissan Chemical Corporation

Hoya Corporation

Yasushi Sakaida

Rikimaru Sakamoto

Satoshi Takei

Takahiro Kishioka

Tetsuya Shinjo

Ryuta Mizuochi

Makoto Nakajima

Keisuke Hashimoto

Shuhei Shigaki

Hiroto Ogata

Yuto Hashimoto

Masahiro Hashimoto

Tokio Nishita

Kenji Takase

Yuki Usui

Tomoya Ohashi

Hiroaki Yaguchi

Masaki Nagai

Takahiro Hiromatsu

Hikaru Imamura

Hirokazu Nishimaki

Yuta Kanno

Satoshi Takeda

Hikaru Tokunaga

Noriaki Fujitani

Ryuji Ohnishi

Bangching Ho

Kazuhisa Ishii

Daisuke Maruyama

The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R-Rrepresents a C-Calkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C-Calkoxyethyl groups, C-Calkylsulfanyl groups and organic groups containing an ester bond, or a C-Calkenyl group; the R-Rmoieties may be the same as or different from each other; and each of Rand Rrepresents a hydrogen atom or a group selected from among C-Calkyl groups and a phenyl group. 

Resist underlayer film forming composition which contains compound having glycoluril skeleton as additive

A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein Ris a Calkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.)

Protective film-forming composition

A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1):  (wherein Xis a substituent reacting with the crosslinker, Ris a direct bond or a Calkylene group, Xis a Calkyl group, Calkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1&#x2264;(b+c)&#x2264;5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method

A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each Ris a methyl group or an ethyl group, and Rand Rare independently a hydrogen atom, a Calkyl group, or phenyl group.

Composition for forming resist underlayer film

There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

Underlying coating forming composition for lithography containing compound having protected carboxyl group

An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer

The present invention provides a resist underlayer film that has a wide focus position range within which a good resist shape can be obtained. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B). The linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B): The linear polymer preferably contains a polymer obtained by a reaction of two diepoxy group-containing compounds (A) each having structures of Formulae (1) and (2) with a dicarboxyl group-containing compound (B) having a structure of Formula (3), or a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B) each having structures of Formulae (2) and (3).

Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound

An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each Ris independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a &#x2014;C(&#x2550;O)O&#x2014;R&#x2014; group, Rconstituting the &#x2014;C(&#x2550;O)O&#x2014;R&#x2014; group is a Calkylene group, the alkylene group is bonded to a sulfur atom, Ris a hydrogen atom, methyl group, methoxy group, or halogeno group, Ris a Calkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).

Additive and resist underlayer film-forming composition containing the same

There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Mask blank, method for manufacturing mask blank and transfer mask

There is provided a polymer-containing coating liquid which is applied to a resist pattern and which is used in place of a conventional rinsing liquid. A coating liquid that is applied to a resist pattern comprising a polymer having a structural unit of Formula (1): (wherein Ris a Corganic group, and X is an organic group of Formula (2): (wherein Rand Rare each independently a linear or branched alkylene group having a carbon atom number of 1 to 3, Ris bonded to an oxygen atom in Formula (1), Ris a Calkoxy group, an allyloxy group, or a hydroxy group, and p is 0, 1, or 2)), and a solvent containing water and/or alcohols.

Polymer-containing coating liquid applied to resist pattern

A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein Ris a Calkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, Ris a hydrogen atom, a Calkyl group, hydroxy group, halogeno group, or ester group of &#x2014;C(&#x2550;O)O&#x2014;X wherein X is a Calkyl group optionally having a substituent, Ris a hydrogen atom, a Calkyl group, hydroxy group, or halogeno group, Ris a direct bond or divalent Corganic group, Ris a divalent Corganic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.)

Resist underlayer film-forming composition and method for forming resist pattern using the same

Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device.

Polymer-containing developer

A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Mask blank and transfer mask

A coating liquid to be applied to resist pattern, which can be used in place of the conventional rinsing liquid. A coating liquid to be applied to a resist pattern having a polymer having a structural unit of the following Formula (1) and a structural unit of the following Formula (2), and a weight average molecular weight of 500 to 3,500, and a solvent containing water as a main component (where Ris a Corganic group).

Coating liquid to be applied to resist pattern and method for forming reverse pattern

There is provided a silicon-containing composition for forming a pattern reversal film that can be reworked by an organic solvent that is normally used for the removal of resist patterns. A composition for forming a pattern reversal film, characterized by comprising: polysiloxane; an additive; and an organic solvent, wherein the polysiloxane has a structural unit of Formula (1) and a structural unit of Formula (2): (where Ris a Calkyl group), and (where Ris an acryloyloxy group or a methacryloyloxy group; and n is an integer of 2 to 4), and the additive is an organic acid having at least two of a carboxy group and/or a hydroxy group; and a pattern reversal film and a method for forming a reversal pattern by use of the composition.

Growing community of inventors

Toyama, Japan

Yasushi Sakaida