Fuji Electric Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Iii Holdings 1, LLC

Fuji Electric Holdings Co., Ltd.

Other

Iii Holdings 2, LLC

National Science and Technology

Yasushi Ogimoto

Haruo Kawakami

Kunio Kojima

Kenji Nakanishi

Michiya Yamada

Hiroyuki Katayama

Masaki Hamamoto

Eiki Adachi

Junichi Sato

Shinzo Sawamura

Yoshiteru Murakami

Hiroshi Fuji

Hideo Nojima

Yasunari Hosoi

Shintaro Miyanishi

Yoshiyuki Masuda

Shigeo Ohnishi

Takashi Oka

Nobuo Tsuchimine

Yoshinori Tokura

Yoshihiro Takahashi

Naoto Nagaosa

Noboru Ootani

A non-contact current sensor includes a spin valve structure (), an electrical unit () that applies a varying current to the spin valve structure (), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (). When a current-induced magnetic field is detected, a coercive force of a free layer () is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit () allows the magnetization directions of a pinned layer () and the free layer () to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (). The resistance reading unit () detects a threshold value corresponding to the transition.

Non-contact current sensor

A spin valve element may include a plurality of magnetic element groups. Each magnetic element group may be formed, at least in part, by a plurality of magnetic elements being connected in parallel. Each magnetic element may include an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer. The plurality of magnetic element groups may be connected together in series or in parallel. The plurality of magnetic elements may be configured to undergo a microwave oscillation and are placed in proximity sufficient that oscillation signals are configured to be generated with the magnetic elements mutually synchronized. The proximity may include a range equal to a wavelength of the microwave oscillation.

Spin valve element and method of manufacturing same

A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

Magnetic memory element and storage device using the same

A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel.

A manganese oxide thin film is formed on a plane of a substrate and has a composition RMnO, where R is at least one and preferably two trivalent rare earth elements selected from lanthanoids, and where both R and Mn form the same atomic layer parallel to the plane of the substrate. An oxide laminate, includes the manganese oxide thin film; and at least one strongly-correlated oxide thin film that is contiguous to the manganese oxide thin film, wherein a total thickness, t, of the oxide laminate, a thickness, tm, of the manganese oxide thin film, and a thickness, t, of the strongly-correlated oxide thin film satisfy a relation, relative to a critical thickness, tc, by which the strongly-correlated oxide thin film has a metallic phase, as follows: t=tm+t&#x3e;tc and t&#x3c;tc. Switching capabilities are ensured by a room temperature (Mott) phase transition.

Manganese oxide thin film and oxide laminate

A thermoelectric conversion material in which the electron spatial distribution assumes a wire structure or a quasi-one-dimensional structure is fabricated. A mode of the present invention provides a thermoelectric conversion structureof a single crystalof SrTiOhaving a (210) plane surface or interface, and having, in the surface or interface, a concave-convex structure including terrace portionsin (100) planes and step portionsextending along the surface in-plane [001] axis.

Thermoelectric conversion structure and method of manufacturing same

A non-contact current censor includes a spin valve structure (), an electrical unit () that applies a varying current to the spin valve structure (), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (). When a current-induced magnetic field is detected, a coercive force of a free layer () is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit () allows the magnetization directions of a pinned layer () and the free layer () to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (). The resistance reading unit () detects a threshold value corresponding to the transition.

The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin filmformed on a plane of a substrateand having a composition represented by a composition formula RMnO(where R is at least one trivalent rare earth element selected from lanthanoids), wherein an atomic layer containing an element R and not containing Mn and an atomic layer containing Mn and not containing the element R are alternately stacked along a direction perpendicular to the plane of the substrate, and the manganese oxide thin film has two nonequivalent crystal axes along an in-plane direction of the plane of the substrate. An aspect of the present invention also provides an oxide laminate having the manganese oxide thin filmof the above aspect to which strongly-correlated oxide thin filmorare formed contiguously.

A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.

Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element

In aspects of the invention, a strongly correlated nonvolatile memory element is provided which exhibits phase transitions and nonvolatile switching functions through electrical means. In an aspect of the invention, a strongly correlated nonvolatile memory element is provided including, on a substrate, a channel layer, a gate electrode, a gate insulator, a source electrode, and a drain electrode. The channel layer includes a strongly correlated oxide thin film, and is formed of a perovskite type manganite which exhibits a charge-ordered phase or an orbital-ordered phase; the gate insulator is formed in contact with at least a portion of a surface or interface of the channel layer and is sandwiched between the channel layer and the gate electrode, and the source electrode and drain electrode are formed in contact with at least a portion of the channel layer.

Strongly correlated nonvolatile memory element

The present invention provides a crystalline substance that has an uneven structure extending along the direction of a crystal axis. An aspect of the present invention provides a crystalline substance, which has a surfaceL that exposes an oxide crystal thereon and extends in a direction of a crystal axis of the oxide crystal, wherein the surfaceL has an uneven structure that is configured by facesL toL extending in at least three orientations along the crystal axis.

Crystalline substance, substrate, and method for producing crystalline substance

The present invention provides a magnetic memory element that has a spin valve structure formed using a free layer, a non-magnetic layer, and a pinned layer. The free layer has a three-layer structure having a first magnetic layer, an intermediate layer, and a second magnetic layer arranged in this order viewed from the non-magnetic layer. The first magnetic layer is made of a ferromagnetic material. The intermediate layer is made of a non-magnetic material. The second magnetic layer is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point T.

Magnetic memory element and non-volatile storage device

A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9&#x2267;n&#x2267;1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.

Perovskite manganese oxide thin film and manufacturing method therefor

An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m) orientation where 19&#x2267;m&#x2267;2. When m is 2 the perovskite manganese oxide thin film has a (210) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.

Perovskite manganese oxide thin film

A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structureis provided, having a SrTiOsubstratehaving a (210) plane substrate surface and having a concave-convex structure including (100) plane terrace portionsand step portionsextending along the in-plane [001] axis of the substrate surface, and a thermoelectric conversion materialformed on the surface of at least a portion of the concave-convex structure.

Growing community of inventors

Higashiyamato, Japan

Yasushi Ogimoto