Canon Kabushiki Kaisha

Yasushi Nakata

Kazutoshi Torashima

Takehiko Soda

Ryuichi Mishima

Shigeru Nishimura

Hiroshi Yuzurihara

Seiichi Tamura

Masahiro Kobayashi

Takanori Watanabe

Yukihiro Kuroda

Masaaki Iwane

Shinichiro Shimizu

Kouhei Hashimoto

Masataka Ito

Masanori Shibata

Masayuki Tsuchiya

A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Semiconducting device, and appliance having the semiconducting device

A photoelectric conversion apparatus, including: a photoelectric conversion unit that converts received light into charges; and an optical structure that is disposed on the opposite side of a light-receiving surface of the photoelectric conversion unit, wherein the optical structure includes a plurality of first insulating parts and a plurality of second insulating parts, wherein a refractive index of the first insulating part is lower than a refractive index of the second insulating part, wherein at least one of the first insulating part and the second insulating part is disposed at intervals shorter than a wavelength of a detection target light, and wherein an effective refractive index of the optical structure is lowest at a reference point and increases as the distance from the reference point increases, or is highest at the reference point and decreases as the distance from the reference point increases.

Photoelectric conversion apparatus, imaging system and mobile body

A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Photoelectric conversion apparatus, imaging system, and moving body

A photodetector device and an optical encoder device that can suppress level variation of a detection signal are provided. A photodetector device of one embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements; a selector circuit that selects a first photoelectric conversion element group and a second photoelectric conversion element group, in the light receiving unit; a differential amplifier that outputs a detection signal in accordance with a difference between a first output signal of the first photoelectric conversion element group and a second output signal of the second photoelectric conversion element group; and a correction unit that corrects the detection signal based on the first output signal and the second output signal.

Photodetector device and optical encoder device

A semiconductor device comprising a plurality of photoelectric conversion elements arrayed on a substrate, a readout unit configured to read out signals from the plurality of photoelectric conversion elements, and a light source unit driver configured to drive a light source unit, wherein the plurality of photoelectric conversion elements include a first element configured to receive incident light and a second element configured to be shielded from the incident light, and the light source unit driver drives the light source based on both a signal from the first element and a signal from the second element read out by the readout unit.

Semiconductor device and optical encoder comprising a light source driver to drive a light source based on signals from an incident light received first element and an incident light shielded second element

An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.

Solid-state image sensor

A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.

Photoelectric conversion device and image sensing

A device comprises a photoelectric conversion portion including a light receiving surface, and a condensing structure which condenses light to the photoelectric conversion portion, wherein in the condensing structure, a first insulating film and a second insulating film having a refractive index higher than that of the first insulating film are laid out in a plane perpendicular to a normal passing through a center of the light receiving surface such that a density of the second insulating film is higher in a central portion of the plane than in a peripheral portion of the plane, and a layout pattern of the first insulating film and the second insulating film in the plane includes a portion having a dimension not more than a maximum wavelength of a visible light range.

Device and imaging system

A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.

Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus

A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle &#x3b8; with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5&#xb0;&#x2266;&#x3b8;&#x2266;4.5&#xb0;, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle &#x3b8; to a direction perpendicular to the principal plane within a range of 0&#xb0;&#x3c;&#x3c6;&#x2266;45&#xb0;, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle &#x3b1; with the two plane direction within a range of 0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0;.

Photoelectric conversion device, its manufacturing method, and image pickup device

It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle &#x3b8; with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5&#xb0;&#x2266;&#x3b8;&#x2266;4.5&#xb0;, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle &#x3c6; to a direction perpendicular to the principal plane within a range of 0&#xb0;&#x3c;&#x3c6;&#x2266;45&#xb0;, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle &#x3b1; with the two plane direction within a range of 0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0;.

Growing community of inventors

Yokohama, Japan

Yasushi Nakata