Matsushita Electric Industrial Co., Ltd.

Screen Holdings Co., Ltd.

Yasushi Nagata

Takeo Yasuho

Hiroshi Kushitani

Hideaki Nakakubo

Masaharu Tanaka

Hiroyuki Onishi

Tomoyuki Iwasaki

Yasushi Sasa

Yuki Sato

Tsutomu Sakuyama

Mitsuru Miyake

A plurality of captured images is acquired while changing a light illumination state. Each captured image is compared with a corresponding reference image to acquire a region where the captured image is darker than the reference image as a dark defect candidate region. From each of a plurality of captured images, a region where the captured image is lighter than the reference image is acquired as a lightness/darkness inverted region. Among the dark defect candidate regions, those that do not overlap by a prescribed criterion or more with any of the lightness/darkness inverted regions are excluded from defect candidates, and then the presence of a defect is acquired on the basis of the defect candidate regions. This suppresses over-detection of defects arising from, for example, grime on the surface during external appearance inspection.

Defect detection device, defect detection method, and program

A first imaging unit images a first region to be subjected to mirror finish treatment of an inspection region of a surface of the object. A second imaging unit images a second region not to be subjected to the mirror finish treatment of the inspection region of the surface of the object. An inspection unit inspects a form of the first region based on a first picked-up image taken by the first imaging unit, and a form of the second region based on a second picked-up image taken by the second imaging unit. During imaging, a holder holds the object so as to have a positional relationship in which the first region has a normal along a first direction rather than a second direction.

Inspection apparatus and inspection method

In an inspection apparatus, light source parts for irradiating an object area on a surface of an object with light from directions, respectively, are provided, and a first picked-up image representing an object area is acquired in one image pickup part by light irradiation from one of the light source parts and a second picked-up image is acquired in the image pickup part by light irradiation from the light source parts. A first defect candidate area is detected by comparing the first picked-up image with a first reference image corresponding to the first picked-up image and a second defect candidate area is detected by comparing the second picked-up image with a second reference image corresponding to the second picked-up image. An overlapping area in the first defect candidate area and the second defect candidate area is specified as a defect area in the object area.

In a first defect candidate area detected on the basis of a difference between a value of each pixel in a picked-up image and a value of a corresponding pixel in a reference image and a second defect candidate area detected on the basis of a ratio between a value of each pixel in the picked-up image and a value of a corresponding pixel in the reference image, an overlapping area is detected as a defect area. It is thereby possible to suppress detection of a false defect and detect a defect with high accuracy. In a preferable defect detection part, a shaking comparison part detects a defect candidate area on the basis of a difference in the pixel value between the picked-up image and the reference image, and a false information reducing part limits pixels to be used for obtaining the above ratio to those included in the defect candidate area.

A frequency switch is configured with two FET switches. One end of a second FET switch is connected between an I/O port and a reception port and the other end is ground. A strip line is connected between the second FET switch and the I/O port, and has an electrical length equivalent to &#xbc; wavelength of a high frequency signal input from transmission port.

High frequency switch

A high frequency switch configured particularly with FET switches. One end of second FET switch is connected between I/O port and reception port and the other end is ground. A parallel unit of strip line and capacitor is connected between second FET switch and I/O port. This parallel unit has the electrical length equivalent to &#xbc; wavelength of the high frequency signal input from transmission port.

A high frequency switch module can handle transmit-receive signals of different frequency bands and realize excellent isolation. The high frequency switch module comprises a discriminating filter, a low-band high frequency switch, and a high-band frequency switch, wherein high-band 90-degree phase shifter that forms at least a high-band high frequency switch is configured by a high-pass filter, and a choke line is parallel-connected to the high-pass filter.

High frequency switch module

A multiband high-frequency switch that is mainly used for mobile phones, comprising a strip line formed of the series connection of first and second strip lines. A second transmitting port is connected to the connection point of the strip lines connected in series via a third diode, and a second control port is connected between the second transmitting port and the third diode. In addition, first and second receiving ports are connected to the receiving-side port of the high-frequency switch via a diplexer.

Multiband high-frequency switch

In a high-frequency switching module for use mainly in a communications apparatus and a high-frequency apparatus equipped with the same, the high-frequency switching module has a group of high-frequency terminals provided on the mounting side surface of a multi-layer assembly of which the lateral sides are formed as no-electrode provided sides excluding the high-frequency terminals. Thus, the high-frequency switching module and the high-frequency apparatus equipped with the same are less susceptible to the external effect.

Growing community of inventors

Kyoto, Japan

Yasushi Nagata