Canon Kabushiki Kaisha

Yasushi Matsuno

Seiji Hashimoto

Takashi Muto

Daisuke Yoshida

Takeru Suzuki

Hirofumi Totsuka

Masahiro Kobayashi

Yusuke Onuki

Toru Koizumi

Kazuhiro Sonoda

Atsushi Furubayashi

Yoshiyuki Nakagawa

Junji Iwata

Kazuyuki Shigeta

Hiromasa Tsuboi

Sho Suzuki

Yasuharu Ota

Takashi Okagawa

Yu Nishimura

Hideo Kobayashi

Kazuhiro Saito

Tetsuya Itano

Junichi Kobayashi

Takayuki Yagi

Mahito Shinohara

Katsuhito Sakurai

Nobuyuki Hirayama

Masahiro Takizawa

Takeshi Akiyama

Kohichi Nakamura

Kenji Makino

Hajime Ikeda

Yu Maehashi

Yukihiro Hayakawa

Hiroaki Naruse

Kazunari Kawabata

Takehiko Soda

Takahiro Shirai

Yasuji Ikeda

Genzo Momma

Kei Fujita

Takafumi Miki

Takahiro Yamasaki

Yasushi Kawasumi

Mizuki Nagasaki

Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Imaging apparatus, and imaging system having a plurality of pixels for outputting a signal based on a generated signal charge

A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

Photoelectric conversion apparatus, photoelectric conversion system, and moving body

A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.

Photoelectric conversion apparatus and image pickup system

Imaging apparatus, imaging system, imaging apparatus driving method, and imaging system driving method

A display device includes plurality of pixels arranged to form rows and columns, row selection circuit, and signal supply circuit for supplying signal to pixels of a row selected from the plurality of pixels by the row selection circuit The signal supply circuit includes first holder including first data holders, scanning circuit for sequentially selecting the first data holders and causing each selected first data holder to receive data, a second holder including blocks each including second data holders, the second holder being configured to time-divisionally receive a plurality of data held by the first holder, and DA converter for supplying a plurality of analog signals corresponding to the plurality of data held by the second holder to the pixels of the row selected from the plurality of pixels by the row selection circuit.

Display device and image capturing device

A display device comprises a pixel area in which a plurality of pixels are arranged, and a dummy pixel area which is provided around the pixel area and in which a plurality of dummy pixels are arranged. Each of the pixel and the dummy pixel includes a light-emitting element including a first electrode and a second electrode, and a driving transistor. The first electrode of the light-emitting element is connected to the driving transistor in the pixel, and in the dummy pixel, the light-emitting element is not connected to the driving transistor, a first potential is supplied to the first electrode, a second potential is supplied to the second electrode, and the light-emitting element does not emit light at a potential difference between the first potential and the second potential.

Display device, image capturing device, illumination device, mobile body, and electronic apparatus

A display apparatus in which selection circuits and display blocks are arranged is provided. Each of the display blocks include signal lines extending in a column direction, and pixels connected to the signal lines and arranged in a matrix in the column direction and in a row direction crossing the column direction. Each of the selection circuits selects a signal line in a predetermined order to supply an image signal among the signal lines such that the image signal is written in each of the pixels arranged in the row direction among the pixels. A time to select at least one signal line among the signal lines and supply the image signal is different from a time to select a signal line other than the at least one signal line among the signal lines and supply the image signal.

Display apparatus

A disclosed embodiment includes: semiconductor substrate including a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion unit configured to accumulate charges generated from an incident light, a charge holding portion configured to hold the charges transferred from the photoelectric conversion unit, and an amplification unit including an input node configured to receive the charges transferred from the charge holding portion; a light-shielding portion arranged so as to cover at least the charge holding portion and extending over at least two or more of the plurality of pixels; a contact plug connected to the light-shielding portion; and a wiring connected to the contact plug to supply a fixed potential to the light-shielding portion via the contact plug.

Solid state imaging device

An image pickup apparatus according to the present invention includes a plurality of pixels arranged in rows and columns, and each of the pixels includes a photoelectric conversion unit that accumulates signal charge generated by photoelectric conversion of irradiated light, a first holding unit and a second holding unit that hold the signal charge transferred from the photoelectric conversion unit, and an output unit that outputs, to a column signal line, a signal based on an amount of the signal charge held by the first holding unit or the second holding unit. The first holding unit and the second holding unit alternately hold the signal charge generated in the photoelectric conversion unit for each frame period, and in a period in which the signal charge is not transferred from the photoelectric conversion unit, the first holding unit and the second holding unit output the signal charge to the output unit.

Image pickup apparatus, method for controlling image pickup apparatus, and image pickup system

A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Solid-state image sensor and image sensing system

Imaging apparatus, imaging system, imaging apparatus driving method, and imaging system driving method using pixels outputting signal based on at least part of photoelectric conversion units

A semiconductor device provides a plurality of circuit units arranged in parallel. Each of the plurality of circuit units includes a first signal line that transmits a first signal, which is an analog signal; a sending unit that sends a second signal; a receiving unit that receives the second signal; and a second signal line that transmits the second signal from the sending unit to the receiving unit. The distance between the first and second signal lines is shorter than the pitches at which the plurality of circuit units is arranged. The second signal is a pulse signal.

Semiconductor device and electronic apparatus

When a level of a signal output from a pixel is higher than a comparison level, the signal output from the pixel is converted into a digital signal during a first period by using a first reference signal. If the level of the signal output from the pixel is lower than the comparison level, the signal output from the pixel is converted into a digital signal during a second period that is longer than the first period by using a second reference signal.

A photoelectric conversion apparatus includes a pixel. The pixel includes a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The photoelectric conversion apparatus includes a control line, a voltage control unit, and a current source. The control line is electrically connected to a source of the amplification transistor. The voltage control unit controls the voltage of the control line. The current source outputs a reference current. A path of a current from the amplification transistor is separated from a path of the reference current. The photoelectric conversion apparatus includes a comparison unit configured to compare the current from the amplification transistor with the reference current. During a period in which a transistor connected to the gate of the amplification transistor is in a conductive state, the selection transistor is in a non-conductive state.

Photoelectric conversion apparatus and photoelectric conversion system

Growing community of inventors

Fujisawa, Japan

Yasushi Matsuno