Denso Corporation

Nippon Soken, Inc.

Toyota Jidosha Kabushiki Kaisha

Yasushi Matsuhiro

Yoshimi Yoshino

Kazushi Asami

Takeshi Ito

Kazuhiko Miura

Tomoyuki Mizuno

Muneo Yorinaga

Takayuki Ishikawa

Takeshi Itou

The invention provides a gas diffusion layer for a fuel cell on which a microporous layer is disposed, which can have lower contact resistance with electrode catalyst layers and improved gas diffusion performance. The gas diffusion layer for a fuel cell of the disclosure has a conductive porous substrate layer and a microporous layer laminated in that order, wherein the microporous layer comprises carbon particles and a water-repellent resin, and has an impregnating portion that impregnates the conductive porous substrate layer and a non-impregnating portion that does not impregnate the conductive porous substrate layer, the thickness of the non-impregnating portion is greater than 0.0 &#x3bc;m and 20.0 &#x3bc;m or smaller, and the thickness of the impregnating portion is 29% or lower with respect to the total thickness of the microporous layer.

Gas diffusion layer for fuel cell

An angular velocity sensor includes a tuning-fork oscillator having a pair of arms jointed by a trunk, the pair of arms extending in parallel to each other, first and second driving piezoelectric elements arranged only on one surface of the trunk with a gap therebetween in an extending direction of the arms, and angular velocity detecting piezoelectric elements arranged on surfaces of the arms in parallel with the one surface of the trunk on which the first and second piezoelectric elements are arranged.

Angular velocity sensor

The output of a synchronous detector is made precise by reducing the offset included in the outputs of detecting piezoelectric elements. This is carried out by applying one y-axis direction exciting force to one movable piece from one pair of driving piezoelectric elements and another y-axis direction exciting force to another movable piece from another pair of driving piezoelectric elements.

Vibration type angular velocity detector

A manufacturing method of semiconductor devices adaptable for use in microelectronics devices such as angular-rate sensors includes the steps of preparing a silicon wafer having a lamination of a p-type silicon substrate and an n-type epitaxial layer as formed thereon, defining on a specified surface of the wafer a plurality of recess portions each having a reduced-thickness portion on the opposite surface side which consists of the epitaxial layer, forming plural through-going holes in each reduced-thickness portion by causing a gel- or oil-like coolant medium made of a thermally conductive material to be disposed in contact with one surface of the reduced-thickness portion of the silicon substrate and by effecting dry etching of certain region from the other surface of the reduced-thickness portion, and thereafter removing the medium. This medium serves to absorb and dissipate heat generated at the reduced-thickness portion during the dry etching.

Method for manufacturing semiconductor devices by use of dry etching

Growing community of inventors

Nukata-gun, Japan

Yasushi Matsuhiro