Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Yasushi Maruyama

Hideshi Abe

Hiroyuki Mori

Takeshi Yanagita

Kazufumi Watanabe

Shin Iwabuchi

Kazuhide Yokota

Takashi Ando

Tetsuji Yamaguchi

Susumu Hiyama

Yuko Ohgishi

Ryoji Suzuki

Nobuo Nakamura

Hiroaki Fujita

Isao Hirota

Tomohiro Yamazaki

Kazuya Yonemoto

Yoshikazu Nitta

Kouichi Harada

Takahisa Ueno

Shunsuke Maruyama

Taichi Natori

Nobuhiro Karasawa

Hideo Nomura

Hirotsugu Takahashi

Hajime Takashima

Junji Yamane

Hiroyuki Terakago

Kensaku Maeda

Taizo Takachi

Hiroaki Yukawa

Dai Sugimoto

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Solid-state imaging device having optical black region, method of manufacturing the same, and electronic apparatus

There is provided a method of manufacturing an imaging device including a plurality of imaging elements in an imaging area, where each imaging element includes a photoelectric conversion unit in a substrate and a wire grid polarizer arranged at a light-incident side of the photoelectric conversion unit. The method generally includes forming the wire grid polarizer that includes a plurality of stacked strip-shaped portions, where each of the plurality of stacked strip-shaped portions includes a portion of a light-reflecting layer and a portion of a light-absorbing layer. The light-reflecting layer may include a first electrical conducting material that is electrically connected to at least one of the substrate or the photoelectric conversion unit. The light-absorbing layer may include a second electrical conducting material, where at least a portion of the light-absorbing layer is in contact with the light-reflecting layer.

Imaging element, method of manufacturing imaging element, imaging device, and method of manufacturing imaging device

Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.

Image pick-up apparatus

Solid-state imaging device having improved light-collection, method of manufacturing the same, and electronic apparatus

There is provided an imaging element including a photoelectric conversion unit formed in a substrate and a wire grid polarizer disposed at a light-incident side of the photoelectric conversion unit. In addition, the wire grid polarizer includes a plurality of strip-shaped portions, where air gaps exist between adjacent strip-shaped portions. Further, a protective layer is formed on the wire grid polarizer.

Imaging element and imaging apparatus

A back-illuminated type solid-state image pickup device () includes read circuits (Tr, Tr) formed on one surface of a semiconductor substrate () to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (), in which electric charges (e) generated in a photo-electric conversion region () formed under at least one portion of the read circuits (Tr, Tr) are collected to an electric charge accumulation region () formed on one surface side of the semiconductor substrate () of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.

Solid-state imaging device, method for producing same, and camera

A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.

Solid-state imaging device and method for manufacturing the same

Growing community of inventors

Kanagawa, Japan

Yasushi Maruyama