Kabushiki Kaisha Toshiba

Yasushi Kumagai

Makoto Sakuma

Takashi Imoto

Katsuhiro Ishida

Naoto Takebe

Yuichi Sano

Tomomi Honda

According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus for semiconductor device

A semiconductor memory device includes: a first dielectric formed on top of a semiconductor substrate; a contact plug embedded in the first dielectric; a second dielectric formed on top of the first interlayer dielectric; an interconnection layer embedded in a groove formed in the second dielectric on top of the contact plug; and an insulating film formed in the second dielectric adjacent to a side surface of the interconnection layer. The contact plug has a notch in a part of a top surface of the contact plug. The insulating film is formed to extend from a top surface of the second dielectric to the notch included in the contact plug.

Semiconductor device which includes contact plug and embedded interconnection connected to contact plug

Growing community of inventors

Kanagawa-ken, Japan

Yasushi Kumagai