Shimadzu Corporation

Tohoku University

Mitsubishi Tanabe Pharma Corporation

Other

Kyoto University

Tanabe Seiyaku Company, Limited

Dna Vec Research Inc.

Shimadu Corporation

Ips Portal, Inc.

Yasushi Kondo

Hideki Tominaga

Shigetoshi Sugawa

Kenji Takubo

Yutaka Suzuki

Kunihiko Ohkubo

Hideki Soya

Takeharu Etoh

Kazuwa Nakao

Kenji Osafune

Yasuji Ueda

Jun Yamashita

Shuhei Yamamoto

Nobuya Inagaki

Hiromasa Maruno

Taro Toyoda

Yutaka Hanazono

Mika Okada

Hideki Mutoh

Ryuta Hirose

Shigetoshi Sugaw

Hiroshi Itoh

Masakatsu Sone

Minoru Okada

Takashi Nakayama

Yoshiyuki Ichinozuka

Nobuo Inoue

A light source device connected to an optical fiber and emit light from the optical fiber, the device includes: a plurality of laser light sources to respectively emit light at different wavelengths; a current source to supply a drive current with a superimposed alternating-current component to each laser light source; a light source control section to selectively switch the laser light sources by controlling the current sources; a plurality of optical systems disposed in optical paths of the respective laser light sources to reflect the light from the respective laser light sources to an incident end of the optical fiber and to reflect return light reflected on the incident end to the respective laser light sources; and a return light adjustment section to adjust an amount of the return light to continuously spread a spectrum of the light emitted from the optical fiber.

Light source device and holographic observation apparatus

A cell area extraction unit () extracts a cell area in a phase image that is created based on a hologram obtained by in-line holographic microscope (IHM). A background value acquisition unit () obtains a background value from phase values at a plurality of positions outside the cell area. An intracellular phase value acquisition unit () averages a plurality of phase values on a sampling line set at a position close to the periphery of a cell, while avoiding a central portion in which the phase value may be lowered in the cell area, to obtain an intracellular phase value. A phase change amount calculation unit () obtains the difference between the intracellular phase value and the background value. A phase change amount determination unit () compares the value of the difference with thresholds in two levels to determine whether the cell is in an undifferentiated state or an undifferentiation deviant state. It is thereby possible to automatically make a correct determination while removing the influence of a theoretical measurement error by IHM.

Cell analysis method and cell analysis system using a holographic microscope

Provided is a method for inducing pancreatic hormone-producing cells from pancreatic progenitor cells efficiently. The method comprises a step of culturing the cells in a culture medium comprising sodium cromoglicate.

Method for generating pancreatic hormone-producing cells

A burst reading memory section () and continuous reading memory section () are independently provided for each of the two-dimensionally arrayed pixels (). The burst reading memory section () has capacitors (-) capable of holding a plurality of signals. The continuous reading memory section () has only one capacitor. Signal output lines for the two memory sections are separately provided. When a signal produced by photoelectric conversion at the pixel () is outputted on a pixel output line (), the signal can be simultaneously written in the capacitors at both memory sections (), after which the signals can be separately extracted to the outside at different timings. Therefore, a series of images taken at extremely short intervals of time during a short period of time can be obtained at an arbitrary timing without impeding a continuous image-acquiring operation at a low frame rate. Accordingly, both an ultrahigh-speed imaging operation having a limitation on the number of frames and an imaging that is rather slow but has no limitation on the number of frames can be simultaneously performed.

Solid-state image sensor for capturing high-speed phenomena and drive method for the same

A transistor () which acts as a load-current source for a source follower amplifying transistor () for outputting a pixel signal to a pixel output line () is provided in each picture element (), whereby a high bias current is prevented from passing through the high-resistance pixel output line (), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line () into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.

Solid state image sensor and method for driving the same

A pixel area with a two-dimensional array of pixels () each including a photodiode and a memory area () on which memory sections for holding signals produced by the pixels for continuously recordable frames are separately provided on a semiconductor substrate. All the pixels simultaneously perform a photocharge storage operation, and the signals produced by the photocharge storage are extracted in parallel through mutually independent pixel output lines (). In a plurality of memory sections connected to one pixel output line, a sample-and-hold transistor of a different memory section is turned on for each exposure cycle so as to sequentially hold signals in a capacitor of each memory section. After the continuous imaging is completed, all the pixel are sequentially read. Unlike CCD cameras, the present sensor does not simultaneously drive all the gate loads. Therefore, the sensor consumes less power yet can be driven at high speeds. The separation between the memory area and pixel area prevents signals from deterioration due to an intrusion of excessive photocharges. As a result, the sensor can perform imaging operations at higher speeds than ever before and yet capture images with higher qualities.

Solid-state image sensor

A floating diffusion () is created substantially at center of the light-receiving surface of an embedded photodiode (), with a gate electrode of a transfer transistor () surrounding the floating diffusion. The concentration (or depth) of impurities in a p-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode () to the floating diffusion (). Thus, the photocharges produced by the photodiode () are efficiently utilized, whereby the detection sensitivity is improved.

Solid-state image sensor and method for producing the same

A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before.

A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.

To supply substantially isolated neural cells in a large amount, and to provide an application means for a neuroregenerative medicine or the like for a neurodegenerative disease, a nervous damage or the like. A method for producing a substantially isolated neural cell, comprising the step of carrying out the suspension culture of embryonic stem cells in the presence of an astrocyte conditioned medium or ingredients substantially equivalent to the conditioned medium; and a neural cell obtained thereby; a cell pharmaceutical composition comprising, as an active ingredient, the isolated neural stem cell; and a method for treating a neurodegenerative disease or nervous damage, comprising the step of introducing the neural cell into a neurodegenerative site or a nervous damage site.

Process for producing nerve cells

An independent pixel output line () is provided for each of two-dimensionally arranged pixels () within a pixel area (). A plurality of memory sections are connected to each pixel output line (). In a continuous reading mode, photocharge storage is simultaneously performed at all the pixels, and signals are collectively transferred from the pixels () through the pixel output lines () to the memory sections, after which the signals held in the memory sections are sequentially read and outputted. In a burst reading mode, the operations of simultaneously storing photocharges at all the pixels and collectively transferring signals from each pixel () through the pixel output line () to the memory sections are sequentially performed for each of the memory sections to hold signals corresponding to a plurality of frames. When a imaging halt command is given, the holding of new signals is halted, and a plurality of frames of image signals held in the memory sections at that point in time are sequentially read and outputted. Thus, both an ultrahigh-speed imaging operation with a limitation on the number of frames and an imaging mode that is rather slow but has no limitation on the number of frames can be performed.

Solid-state image sensor and drive method for the same

When an external trigger is received as a predetermined signal after receiving a signal concerning a start of imaging, controls are carried out to stop driving of a CCD type solid-state image sensor (CCD) from receipt of the signal concerning a start of imaging until receipt of the external trigger, and to start the driving of the CCD synchronously with the receipt of the external trigger. Thus, the driving of the CCD is not started immediately upon receipt of the signal concerning a start of imaging, and the driving time of the CCD can be shortened by the time from receipt of the signal concerning a start of imaging until receipt of the external trigger, thereby suppressing heat generation of the CCD.

Method of driving an image sensor, and an image pickup apparatus

A pixel output line () is independently provided for each of the pixels arranged in a two-dimensionally array within a pixel area so that pixel signals can be sequentially written in a plurality of memory sections () through the pixel output lines (). When a plurality of frames of pixel signals are held in the memory sections (), the pixel signals corresponding to two arbitrarily selected frames are read and respectively stored in sample-and-hold circuits (and), and their difference is obtained. Then, the difference signals corresponding to a predetermined range of the image are integrated, and the integrated value is compared with a threshold. If the integrated value exceeds the threshold, it is presumed that a change in an imaging object has occurred, and a pulse generation circuit () generates a trigger signal. By controlling the discontinuation and other imaging actions according to this trigger signal, it is possible to correctly take high-speed images of the situation before or after the occurrence of an objective phenomenon.

Solid-state image sensor and imaging device

An image converter tubeand a plurality of image sensors CCDs(eight CCDshere) are provided, and the respective CCDsand image positions in the image converter tubeare in one-to-one correspondence. By carrying out at least one of a control to make a shift to a different image position after image formation in one and the same image position for a predetermined number of frames, and a control to make a shift to a different image position in an imaging cycle with a predetermined time interval, various image pickup situations can be accommodated without changing the structure of CCDsper se.

Image pickup apparatus

A CCD type solid-state image sensor (CCD) and an image pickup apparatus of this invention have an image pickup unit and a charge multiplier mounted, as separated from each other, on a packaging board, thereby reducing an influence of one of the image pickup unit and the charge multiplier on the other. Consequently, an improvement in yield is realized. With the image pickup unit and the charge multiplier mounted, as separated from each other, on the packaging board, the CCD type solid-state image sensor (CCD) and the image pickup apparatus are highly versatile also when a design change is made in one of the image pickup unit and the charge multiplier.

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Kyoto, Japan

Yasushi Kondo