Fujitsu Corporation

Shinko Electric Industries Co., Ltd.

Nec Corporation

Yasushi Kobayashi

Yoshihiro Nakata

Shirou Ozaki

Tadahiro Imada

Kazuyuki Sakai

Tsuyoshi Kanki

Yuuki Tada

Akio Rokugawa

Sadahiro Kishii

Masato Tanaka

Yutaka Higashiguchi

Yasuhiro Teshima

Toshio Kumai

Yasuhiro Ichihara

Tomoyuki Kobayashi

Kouta Yoshikawa

Mamoru Niishiro

Shuzo Igarashi

Yoshihiro Teruya

Yukio Sekiya

Kimio Hosoya

Ei Yano

Yoshikatsu Ishizuki

Yuichi Minoura

Shinya Sasaki

Kazuki Takahashi

Mitsuo Inagaki

Daijiro Ishibashi

Ryoichi Ochiai

Seiji Kogure

Hiroshi Iimura

Hideaki Tamura

Akira Ide

Shiro Ozaki

Seishi Chiba

A resin board includes: a resin layer and a through electrode buried in the resin layer, wherein the through electrode has an electrode surface exposed from a front surface or a back surface of the resin layer and a lateral surface, and the electrode surface and the lateral surface form an obtuse angle.

Resin board, method of manufacturing resin board, circuit board, and method of manufacturing circuit board

After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu&#x2014;N&#x2014;R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu&#x2014;N&#x2014;R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

Interconnection structure and method of forming the same

An object of the present invention is to provide a cover that is made less prone to be removed even if receiving an impact due to falling or the like, and an operation for removing the cover is made easy. An engaging piece position regulating member made of a viscoelastic body such as an urethane-based resin is provided on a left side of an elastically-deformable engaging piece of a cover, which allows an engaging projection of the engaging piece to leave from an engaging hole when the cover is removed from a device casing by manual operation and inhibits the engaging projection of the engaging piece from leaving from the engaging hole when a rate of deformation larger than a rate of deformation by manual operation is provided to the engaging piece by an impact due to falling or the like.

Locking structure for cover

A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

Semiconductor device and its manufacture method

The present invention, an apparatus includes a data management apparatus comprising, a determination unit configured to determine whether an analyzing apparatus is in a communicable state when a configuration information data indicating a status of a server apparatus is received from a data collection apparatus, the data analyzing apparatus analyzing the configuration information data, an unprocessed information storage unit configured to store the received configuration information data once it is determined that data analyzing apparatus is in an incommunicable state, an integrating unit configured to integrate a plurality of configuration information data stored in the storage unit in accordance with a predetermined condition; and a notifying unit configured to send, to the analyzing apparatus, a message indicating that the data management apparatus is storing the configuration information data integrated by the integrating unit once it is determined that the data analyzing apparatus is in a communicable state.

Data management apparatus and method

A data collection apparatus includes an information storing unit which stores application information collected from a server providing a service by running an application and includes detail information indicating a detail of the application, an information collecting unit which collects the application information from the server, an information identifying unit which identifies application information in which an abnormality has occurred and application information, affected by the abnormality, a first comparing unit which compares, as to the application information identified by the information identifying unit, all application information including the detail information and all application information including the detail information collected in the previous point, and extracts application information different from the application information collected in a previous point, and an information sending unit which sends the application information, extracted by the first comparing unit, to a data management apparatus which manages the application information.

Data collection apparatus and method thereof

The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device

An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1: where Rmay be the same or different to each other in the unit repeated 'n' times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; Rmay be the same or different to each other in the unit repeated 'n' times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof

A configuration information collection unitand a transaction collection unitcollect a transaction as the configuration information about an IT system and communication data, and stores them in a CMDB. A multiplexed application detection unitdetects as a candidate for a multiplexed application the software of applications multiplexed by evaluating whether or not the application names of the software of applications deployed to a target to be monitored on the IT system match each other. Then, it detects a multiplexed application by evaluating whether or not one or more of evaluation items of a subnet in which a candidate for a multiplexed application is performed, transaction context as the data relating to the names of an applications performed before and after the candidate for a multiplexed application, and transaction information as the transmission/reception data of the candidate for a multiplexed application match each other.

Device, method, and storage medium for detecting multiplexed relation of applications

Computer product for generating configuration-information that performs obtaining a first process information operating on a server from each of a plurality of servers constituting an IT system prior to a start of processes in any of the servers, the processes including a process corresponding to an application for an IT service; repeatedly obtaining a second process information from each of the servers through the start to end of the processes performing the application; specifying third process information corresponding to the application by removing the first process information from the second process information; and generating configuration information for monitoring a process condition of the processes, from the third process information, a process name corresponding to the application and identification information of the server where the process corresponds to the process name of the application, the extracted process name being associated with the identification information.

Computer product, apparatus and method for generating configuration-information for use in monitoring information technology services

The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

Semiconductor device and method of manufacturing semiconductor device

A silicic coating of 2.4 g/cmor higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

Process for producing silicic coating, silicic coating and semiconductor device

An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below:Si&#x2014;CH&#x2014;Si&#x2003;&#x2003;General Formula (1)where y is equal to 2x and is an even integer.

Interconnection substrate having first and second insulating films with an adhesion enhancing layer therebetween

A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained.

Growing community of inventors

Kawasaki, Japan

Yasushi Kobayashi