Renesas Technology Corp.

Dai Nippon Printing Co., Ltd.

Ebara Corporation

Dai Nippon Printing

Yasushi Kawai

Norio Hasegawa

Kazuya Hirata

Katsuya Hayano

Shigeru Noguchi

Yasuhiro Koizumi

Shinji Kubo

A shaft seal device is fixed to a container that separates a high-pressure fluid and a low-pressure fluid from each other, and seals a shaft-penetrated portion of the container through which a rotational shaft extends. This shaft seal device includes: a seal casing having a through-hole through which the rotational shaft extends, the seal casing having a seal chamber which communicates with the through-hole and into which the high-pressure fluid flows; and a disk-shaped seal body which is housed in the seal chamber, the seal body being rotatable together with the rotational shaft and having an annular surface perpendicular to an axis of the rotational shaft. An inner surface of the seal casing, which faces the annular surface of the seal body and defines the seal chamber, is a flat surface perpendicular to the axis of the rotational shaft.

Shaft seal device and vertical pump with this shaft seal device

A mask fabrication time is shortened. By patterning an electron-sensitive resist film coated on a main surface of a mask substrate, a pellicle is mounted on the main surface of the mask substrate immediately after a resist pattern made from an electron beam sensitive resist film and having light-shielding characteristics with respect to exposure light is formed. Subsequently, by irradiating a laser beam to defect made from the electron beam sensitive resist film with the pellicle being mounted on the mask substrate, the defect is removed. Since the defect can be removed without removing the pellicle, the mask fabrication time can be shortened.

Fabrication method of semiconductor integrated circuit device and mask fabrication method

An ion beam I is irradiated from an ion gun 10 onto a sample S on an XY stage 100, and an electron shower E is irradiated onto the sample S. Electrification of the sample by ion is neutralized by irradiation of the electron shower E. In the case of adjusting the electron shower E, a drive system 200 is driven by a control signal from a control unit 300 to scan a spot of the electron shower E by a Faraday cup F positioned at a corner of the XY stage 100. Detected current values of the Faraday cup F at respective scanning positions are amplified at an amplifier 210. The current values thus amplified are digitized at an A/D converter 220, and are then delivered to the control unit 300. The control unit 300 displays the intensity distribution of the electron shower E obtained by this scanning on a display unit 400.

Focused ion beam irradiating apparatus

Growing community of inventors

Tokyo, Japan

Yasushi Kawai