Sumitomo Chemical Company, Limited

Nuflare Technology, Inc.

Japan Pionics Co., Ltd.

Yasushi Iyechika

Yoshinobu Ono

Tomoyuki Takada

Yoshihiko Tsuchida

Kazumasa Hiramatsu

Hideto Miyake

Takayoshi Maeda

Masaya Shimizu

Masato Akita

Katsumi Inui

Masayuki Tsukui

Hajime Nago

Kiyotaka Miyano

Takanobu Noguchi

Shuji Doi

Noboru Fukuhara

Toshihiro Ohnishi

Tsuyoshi Nakano

Sadanori Yamanaka

Hideshi Takahashi

Yoshitaka Ishikawa

Shinya Bohyama

Toshihisa Katamime

Yukichi Takamatsu

Tatsuya Ohori

Yoshiyasu Ishihama

Takeo Yoneyama

Takashi Haraguchi

Yasuyuki Kurita

Yoshinao Komiya

Kazushige Shiina

Takehiko Kobayashi

Noboru Suda

Toshihisa Katamine

A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

Vapor phase growth method using reflector with changeable pattern

Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.

Vapor phase growth method

A growth rate detection apparatus has a reflectometer to measure reflectivity of a thin film by receiving reflected light of light irradiated with the thin film, a growth rate candidate calculator to calculate a first growth rate and a second growth rate which are candidates for a growth rate of the thin film based on a temporal variation period of the reflectivity and a refractive index of the thin film in a case where the reflectometer irradiates the thin film with light of a first wavelength and to calculate a third growth rate and a fourth growth rate which are candidates for the growth rate of the thin film based on the temporal variation period and the refractive index in a case where the reflectometer irradiates the thin film with light of a second wavelength, and a growth rate selector to select a common growth rate.

Growth rate detection apparatus, vapor deposition apparatus, and vapor deposition rate detection method

A vapor phase growth rate measuring apparatus has an initial parameter setting adjuster to set initial values of fitting parameters, a refractive index of each thin film to be formed on the substrate, a growth rate of each thin film, and at least one parameter having temperature dependence, a film thickness calculator to calculate a film thickness of each thin film, a parameter selector to select a value in accordance with a growth temperature for the parameter, a reflectometer to measure a reflectance of the substrate, a reflectance calculator to calculate a reflectance of the substrate, an error calculator to calculate an error between the calculated reflectance and an actual measurement value of the reflectance measured at a plurality of times, a parameter changer to change at least a part of the values of the fitting parameters, and an output value generator to generate characteristic values of each thin film.

Vapor phase growth rate measuring apparatus, vapor phase growth apparatus, and growth rate detection method

A growth-rate measuring apparatus has a refractometer to irradiate light of a plurality of different wavelengths to a surface of a substrate to measure a reflectivity of the surface of the substrate per different wavelengths, a fitter to fit a reflectivity calculated by a model function, the model function being obtained in advance, to a measured value of the reflectivity, for at least one layer of thin films laminated one by one on the substrate, with at least one of a refractive index and a growth rate as a fitting parameter, a parameter extractor to extract sets of fitting parameters for each wavelength in the different wavelengths, respectively, for which an error between the calculated reflectivity and the measured value of the reflectivity is minimum, and a parameter selector to select an optimum set of values of the fitting parameter, among the fitting parameters extracted for the different wavelengths.

Growth-rate measuring apparatus and growth-rate detection method

A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion having ring-shape and an inner portion having ring-shape, the inner portion including a substrate mounting surface positioned below an upper surface of the outer portion, the substrate mounting surface being a curved surface, the curved surface having convex regions and concave regions repeated in a circumferential direction, the curved surface having six-fold rotational symmetry, and a heater provided below the ring-shaped holder.

Vapor phase growth apparatus and ring-shaped holder having a curved mounting surface with convex and concave regions

A film forming apparatus includes: a support, a rotator, a gas supplier, and a radiation thermometer configured to measure a temperature of a surface of a substrate, wherein the radiation thermometer includes: a light source of an irradiation light to be irradiated to the surface of the substrate; a first light receiver configured to receive a reflected light from a first measurement region at a predetermined distance from the rotation center on the surface of the substrate; and a second light receiver configured to receive a heat radiation light from a second measurement region extending in a rotation direction of the substrate at the predetermined distance from the rotation center on the surface of the substrate.

Film forming apparatus and thermometry method

A radiation thermometer has a broadband light source which generates broadband light; an optical filter which, when the broadband light is incident on the measuring target object, passes only light in a predetermined wavelength range of reflected light and heat radiation light from a measuring target object; a light receiver which receives the light in the predetermined wavelength range through the optical filter; and a calculator which calculates a temperature of the measuring target object by using reflected light intensity and heat radiation intensity of the light in the predetermined wavelength range received by the light receiver, wherein an emission spectrum of the broadband light is a spectrum with a full width at half maximum which is equal to or wider than the predetermined wavelength range, and with light intensity increasing while a wavelength thereof becomes longer in the predetermined wavelength range.

Radiation thermometer and thermometry method

A curvature measurement apparatus according to an embodiment includes: a laser beam emitting portion emitting a laser beam; a first polarization beam splitter separating the emitted laser beam into first and second laser beams in different polarization directions and in different travel directions; a mirror reflecting the first laser beam so that the first and second laser beams travel side by side to a substrate; a second polarization beam splitter transmitting the second laser beam mirror-reflected from the substrate and reflecting the first laser beam, mirror-reflected from the substrate, in a direction different from a travel direction of the second laser beam; a one-dimensional first position detection device detecting an incident position of the reflected first laser beam on the first position detection device; and a one-dimensional second position detection device detecting an incident position of the transmitted second laser beam on the second position detection device.

Curvature measurement apparatus and method

A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Chemical vapor deposition apparatus

In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

Method for producing and epitaxial substrate for compound semiconductor light-emitting device

A group 3&#x2013;5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

Group 3-5 compound semiconductor and light emitting diode

Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device

When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InGaAlN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.

Growing community of inventors

Matsudo, Japan

Yasushi Iyechika