Hitachi, Ltd.

Yasushi Ishikawa

Naoya Kanda

Keiji Arimatsu

Hiroo Ohkawa

Hirosuke Yamaguchi

Fumiomi Ueda

Takashi Hagiya

Kunio Matsumoto

Akio Fujiwara

Hiroshi Asao

A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction is disclosed. The magnetic film forming system includes a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable while still holding the substrate, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Magnetic film forming system

A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction. The magnetic film forming system comprises a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable with the substrate held, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

An ion-beam sputtering apparatus using an insulator target and a method for operating the same which is characterized by interposing a conductor film forming process during the ion beam processings using the insulator target. This conductor film formation prevents undesired charge build up on the inside of the apparatus and prevents undesired occurrence of abnormal discharge in the ion beam processing using an insulator as a target.

Ion-beam sputtering apparatus and method for operating the same

Ion beams drawn out of a plurality of ion beam sources or neutralized beams derived therefrom are projected to a plurality of targets, and sputtered particles discharged from the targets are directed to a substrate. The composition of sputtered particles is measured in the vicinity to the substrate. The measured coomposition is compared with the predetermined reference value and the composition of sputtered particles is controlled based on the result of measurement. sputtered particles having a controlled composition distribution are deposited on the substrate thereby to form a multiple-element thin film.

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Katsuta, Japan

Yasushi Ishikawa