Toyoda Gosei Co., Ltd.

Kanagawa Academy of Science and Technology

Yasushi Hirose

Miki Moriyama

Tetsuya Hasegawa

Taro Hitosugi

Junpei Kasai

Yutaka Furubayashi

There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlGaInN layer (wherein 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;z&#x2266;1) and an oxide material layer composed of a metal oxide and formed on the AlGaInN layer. The metal oxide may be TiO. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

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Tokyo, Japan

Yasushi Hirose