Shinko Electric Industries Co., Ltd.

Yasushi Hatakeyama

Toshihisa Yoda

Kenji Kawamura

Hironori Nishizawa

In a cap for a semiconductor device in which a light transmissive window is fixed to a cap body provided with a light transmissive opening using low-melting glass as a fixing material so that the light transmissive window covers the light transmissive opening, the low-melting glass is leadless vanadate-series low-melting glass, and the light transmissive window is fixed to the cap body through an eutectic alloy layer formed by an eutectic reaction of vanadium contained in the low-melting glass and metal applied on the surface of the cap body.

Cap for semiconductor device

An optical cap for semiconductor device, the cap comprising: a metal cap body having an opening and a transparent optical window sealed with the metal cap body to cover the opening by means of a sealing member. The sealing member includes a bismuth low-melting point glass containing no lead, an intermediate metal layer attached to the metal cap body, the intermediate metal layer being a metal capable of causing a eutectic reaction with respect to Bi contained in the low-melting point glass, and an eutectic alloy layer thus formed between the low-melting point glass and the intermediate metal layer.

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Nagano, Japan

Yasushi Hatakeyama