Hitachi, Ltd.

Renesas Technology Corp.

Kabushiki Kaisha Toshiba

Other

Hitachi Automotive Systems, Ltd.

Yasushi Goto

Natsuki Yokoyama

Tokuo Kure

Heewon Jeong

Toshiyuki Mine

Tetsuo Ono

Masayuki Kojima

Motohiko Yoshigai

Takashi Sato

Tatsumi Mizutani

Takafumi Tokunaga

Kiyoko Yamanaka

Jiro Yugami

Hideyuki Kazumi

Ken Yoshioka

Masaru Izawa

Shuntaro Machida

Hideaki Kurata

Naoyuki Kofuji

Tsukasa Fujimori

Yasuhiro Nishimori

Takashi Kobayashi

Katsutaka Kimura

Hitoshi Kume

Yoshiaki Yazawa

Koichi Yokosawa

Toru Fujimura

Kei Takenaka

Takehiko Hasebe

Naotaka Oda

Sadaki Nakano

Tadashi Miyazaki

Tadashi Umezawa

Hiroaki Kenjyo

Syunichi Saeki

Takayuki Kawahara

Makoto Torigoe

Toshifumi Sato

Kan Yasui

Masayuki Miyazaki

Kazuki Watanabe

Shinichiro Kimura

Hiromasa Noda

Nobuyoshi Kobayashi

Takashi Hattori

Toshiaki Nakamura

Masahide Hayashi

Kouichi Uesaka

Takahiro Onai

Hiroshi Yoshigi

Yuko Hanaoka

Koji Hirukawa

Toshiaki Ito

Teruji Tarumi

Hideaki Takano

Tadashi Oonishi

Ryo Nemoto

Yuki Narawa

Nobuaki Oono

Jeong Heewon

An autonomous power supply system includes a generation control circuit which controls power generation efficiency of a power generation element, a group of storage elements for charging electric power generated by the power generation element, and a charging control circuit which controls a charging operation and a discharging operation of the storage element group. The storage element group includes a primary storage element for supplying electric power to the generation control circuit and the charging control circuit, and secondary storage elements for supplying electric power to a loading device. The electric power generated by the power generation element charges the primary storage element preferentially, and the secondary storage elements subsequent to the primary storage element. A capacity value of the primary storage element is set to be smaller than a capacity value of the secondary storage elements.

Autonomous power supply system

It is provided with a reactor water-level measurement system being possible to measure water-level in a reactor core regardless of a state in the reactor core. The reactor water-level measurement system includes a core bottom water-level measuring device that includes a heating element, a heat insulating element installed by surrounding part of the heating element in a height direction of the heating element, and a temperature difference measuring element that measures a temperature difference between an insulated portion of the heating element surrounded by the heat insulating element and a non-insulated portion not surrounded by the heat insulating element, a water-level evaluation device that evaluates a water level of a reactor based on the temperature difference, wherein the core bottom water-level measuring device measures at least a water level from a lower end of a reactor core contained in a reactor pressure vessel to a bottom of the reactor pressure vessel.

Reactor water-level measurement system

A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is leviated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

Angular velocity detecting device

A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

To provide a rod block monitor in which irrespective of the selection or non-selection of a control rod, such a process is repeatedly executed that gain adjustment is performed at fixed intervals at all times to match a local area average value of signals of neutron detectors surrounding the control rod with a nuclear reactor average power and a block level appropriate to the local area average value of the neutron detector signals after the gain adjustment is set.

Rod block monitor

An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.

Inertial sensor and method of manufacturing the same

A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.

Capacitance sensor

Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.

Diversity signal processing system and a producing method thereof

Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.

Method of manufacturing micro electro mechanical systems device

As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.

Semiconductor device with integrated circuit electrically connected to a MEMS sensor by a through-electrode

A liquid conveying substrate comprises: rectangular electrodes which are disposed on the substrate surface and whose surfaces are covered with a dielectric with a water repellent surface; first axial electrode columns where the rectangular electrodes are coupled in an x direction; and second axial electrode columns where the rectangular electrodes are coupled in a y direction. Accordingly, electrodes necessary for conveying liquid droplets can be arranged on one substrate, and the number of mechanisms for controlling the potential can be suppressed.

Actuator for manipulation of liquid droplets

It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contactopposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.

Switch, semiconductor device, and manufacturing method thereof

An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.

Actuator system

Growing community of inventors

Kokubunji, Japan

Yasushi Goto