Denso Corporation

Yasushi Furukawa

Yukihiko Watanabe

Masahiro Sugimoto

Narumasa Soejima

Hidefumi Takaya

Tsuyoshi Ishikawa

Kensaku Yamamoto

Yasuo Kitou

Osamu Kasebe

Hiroki Watanabe

Hitoshi Kuno

Hiroaki Fukuda

Tomomi Takagi

An electrical apparatus includes a semiconductor element, conductors and a covering resin. The conductors are connected to the semiconductor element. At least one of the conductors extends in a first direction. The covering resin covers the semiconductor element and a portion of each of the conductors. The conductors respectively include covering portions and exposing portions. Each of the covering portions is covered by the covering resin. Each of the exposing portions is exposed from the covering resin. The conductors are aligned in a second direction. Two of the exposing portions closest to each other are spaced apart in each of the second direction and a third direction. The third direction is perpendicular to the first direction and the second direction. A shortest separation distance between two closest covering portions is shorter than a shortest separation distance between two closest exposing portions.

Electrical apparatus

A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

Manufacturing method of silicon carbide single crystal

In a heat exchanger having tubes and fins, a polyaniline film made of polyaniline and/or a derivative thereof is formed on the surfaces of the tubes and the fins. This polyaniline film is imparted with at least one hydrophilic functional group selected from the class consisting of a primary amino group, a secondary amino group, a tertiary amino group, an ammonium group, a nitric acid group, a carboxyl group, a sulfonic acid group, a phosphonic acid group and a hydroxyl group. Accordingly, the surfaces of the tubes and the fins has good water wettability while maintaining deodorizing and sterilizing functions.

Base material having thereon polyaniline-containing film surface, and process for forming film surface on base material

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Obu, Japan

Yasushi Furukawa