Az Electronic Materials USA Corp.

Dainippon Ink and Chemicals, Incorporated

Az Electronic Materials (Japan) K.k.

Electronic Materials USA Corp.

Merck Patent Gmbh

Yasushi Akiyama

Munirathna Padmanaban

Yusuke Takano

Katsutoshi Kuramoto

Srinivasan Chakrapani

Shigemasa Nakasugi

Go Noya

Masakazu Kobayashi

Kiyofumi Takano

Kazuma Yamamoto

Tetsuo Okayasu

Shinji Miyazaki

Kiyohisa Takahashi

Sung-Eun Hong

Jirou Matsuo

The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.

Composition for forming a developable bottom antireflective coating

Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R, R, R, and Rrepresents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and Xrepresents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount. 

Composition for formation of top antireflective film, and pattern formation method using the composition

The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.

Composition for formation of antireflection film and pattern formation method using the same

The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a Cto Calkanolamine salt of Cto Cperfluoroalkylcarboxylic acid, Cto Cperfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 &#x212b; to 600 &#x212b;, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

Process for preventing development defect and composition for use in the same

The object of the present invention is to provide an anti-reflective coating composition having excellent coating properties while maintaining performance as an anti-reflective film. An anti-reflective coating composition comprising at least the following components (A), (B), (C), (D), and (E) and a production method for a pattern using the anti-reflective coating composition, (A) perfluoroalkyl&#x2022;alkylenesulfonic acid represented by the following formula (1): CF(CHCH)SOH (1) (wherein, n represents an integer from 1 to 20, and m represents an integer from 0 to 20); (B) organic amine; (C) water-soluble polymer; (D) perfluoroalkylethyl group containing compound represented by the following formula (2): CFCHCH&#x2014;X&#x2014;Y (2) (wherein, k represents an integer from 1 to 20, x represents a single bond or a divalent linking group, y represents an anionic group or a nonionic group, and this compound has a structure different from that of the component (A)); and (E) water.

Anti-reflective coating composition and production method for pattern using the same

An anti-reflective coating film is formed by applying on a chemically amplified photoresist film an anti-reflective coating composition comprising an alkali-soluble fluorine-containing polymer, an acid, an amine and a solvent capable of dissolving these components and having a pH of 7 or less. The formed anti-reflective coating film can serve to prevent multiple reflections within the photoresist film, increase the amount of reduction in thickness of the photoresist film upon development with a developer after exposure, and form a pattern having a rectangular cross-sectional pattern and not having T-top or round top.

Composition for antireflection coating and method for forming pattern

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Kakegawa, Japan

Yasushi Akiyama